Vertically well-aligned ZnO nanowires on c-Al2O3 and GaN substrates by Au catalyst

Hyun Kyu Park, Myung Hoon Oh, Sang Woo Kim, Gil Ho Kim, Doo Hyeob Youn, Sunyoung Lee, Sang Hyeob Kim, Ki Chul Kim, Sung Lyul Maeng

Research output: Contribution to journalArticlepeer-review


In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned while nanowires normally tilted from the surface when grown on Au-coated c-Al 2O3 substrates. However, pre-growth annealing of the Au thin layer on c-Al2O3 resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

Original languageEnglish
Pages (from-to)787-789
Number of pages3
JournalETRI Journal
Issue number6
Publication statusPublished - 2006 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Electrical and Electronic Engineering


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