In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned while nanowires normally tilted from the surface when grown on Au-coated c-Al 2O3 substrates. However, pre-growth annealing of the Au thin layer on c-Al2O3 resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.
|Number of pages||3|
|Publication status||Published - 2006 Dec|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Electrical and Electronic Engineering