Very high frequency plasma reactant for atomic layer deposition

Il Kwon Oh, Gilsang Yoo, Chang Mo Yoon, Tae Hyung Kim, Geun Young Yeom, Kangsik Kim, Zonghoon Lee, Hanearl Jung, Chang Wan Lee, Hyungjun Kim, Han Bo Ram Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Although plasma-enhanced atomic layer deposition (PE-ALD) results in several benefits in the formation of high-k dielectrics, including a low processing temperature and improved film properties compared to conventional thermal ALD, energetic radicals and ions in the plasma cause damage to layer stacks, leading to the deterioration of electrical properties. In this study, the growth characteristics and film properties of PE-ALD Al 2 O 3 were investigated using a very-high-frequency (VHF) plasma reactant. Because VHF plasma features a lower electron temperature and higher plasma density than conventional radio frequency (RF) plasma, it has a larger number of less energetic reaction species, such as radicals and ions. VHF PE-ALD Al 2 O 3 shows superior physical and electrical properties over RF PE-ALD Al 2 O 3 , including high growth per cycle, excellent conformality, low roughness, high dielectric constant, low leakage current, and low interface trap density. In addition, interlayer-free Al 2 O 3 on Si was achieved in VHF PE-ALD via a significant reduction in plasma damage. VHF PE-ALD will be an essential process to realize nanoscale devices that require precise control of interfaces and electrical properties.

Original languageEnglish
Pages (from-to)109-117
Number of pages9
JournalApplied Surface Science
Volume387
DOIs
Publication statusPublished - 2016 Nov 30

Fingerprint

Atomic layer deposition
Plasmas
Electric properties
Ions
Plasma density
Electron temperature
Leakage currents
Deterioration
Permittivity
Physical properties
Surface roughness

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Oh, I. K., Yoo, G., Yoon, C. M., Kim, T. H., Yeom, G. Y., Kim, K., ... Lee, H. B. R. (2016). Very high frequency plasma reactant for atomic layer deposition. Applied Surface Science, 387, 109-117. https://doi.org/10.1016/j.apsusc.2016.06.048
Oh, Il Kwon ; Yoo, Gilsang ; Yoon, Chang Mo ; Kim, Tae Hyung ; Yeom, Geun Young ; Kim, Kangsik ; Lee, Zonghoon ; Jung, Hanearl ; Lee, Chang Wan ; Kim, Hyungjun ; Lee, Han Bo Ram. / Very high frequency plasma reactant for atomic layer deposition. In: Applied Surface Science. 2016 ; Vol. 387. pp. 109-117.
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Oh, IK, Yoo, G, Yoon, CM, Kim, TH, Yeom, GY, Kim, K, Lee, Z, Jung, H, Lee, CW, Kim, H & Lee, HBR 2016, 'Very high frequency plasma reactant for atomic layer deposition', Applied Surface Science, vol. 387, pp. 109-117. https://doi.org/10.1016/j.apsusc.2016.06.048

Very high frequency plasma reactant for atomic layer deposition. / Oh, Il Kwon; Yoo, Gilsang; Yoon, Chang Mo; Kim, Tae Hyung; Yeom, Geun Young; Kim, Kangsik; Lee, Zonghoon; Jung, Hanearl; Lee, Chang Wan; Kim, Hyungjun; Lee, Han Bo Ram.

In: Applied Surface Science, Vol. 387, 30.11.2016, p. 109-117.

Research output: Contribution to journalArticle

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AU - Lee, Zonghoon

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AU - Lee, Chang Wan

AU - Kim, Hyungjun

AU - Lee, Han Bo Ram

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