Violet and orange luminescence from Ge-implanted SiO2 layers

W. S. Lee, J. Y. Jeong, H. B. Kim, K. H. Chae, C. N. Whang, Seongil Im, J. H. Song

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

Ge ions of 100 keV were implanted into a 120-nm thick SiO2 layer at room temperature (RT), 300, and 500 °C. The employed doses of Ge ion were 5×1015, 1×1016, 5×1016, and 1×1017 cm-2. Maximum intensity of sharp violet photoluminescence (PL) from the sample implanted at room temperature with a dose of 1×1016 cm-2 is observed after the sample has been annealed at 500 °C for 2 h. Broad orange luminescence is also shown in hot-implanted samples besides the violet. Both are known as defect-related luminescences. As observed by current-voltage (I-V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region while a nanocrystal-related sample obtained by an annealing at 1100 °C for 4 h shows the leakages at both the reverse and the forward region. The carrier-transport and EL mechanisms are explained from the PL and I-V results.

Original languageEnglish
Pages (from-to)474-478
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume69
DOIs
Publication statusPublished - 2000 Jan 14
EventThe European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France
Duration: 1999 Jun 11999 Jun 4

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this