Abstract
As the lighting technology evolves, the need for violet light-emitting diodes (LEDs) is growing for high color rendering index lighting. The present technology for violet LEDs is based on the high-cost GaN materials and metal-organic chemical vapor deposition process; therefore, there have recently been intensive studies on developing low-cost alternative materials and processes. In this study, for the first time, we demonstrated violet LEDs based on low-cost materials and processes using a p-CuI thin film/n-MgZnO quantum dot (QD) heterojunction. The p-CuI thin film layer was prepared by an iodination process of Cu films, and the n-MgZnO layer was deposited by spin-coating presynthesized n-MgZnO QDs. To maximize the performance of the violet LED, an optimizing process was performed for each layer of p- and n-type materials. The optimized LED with 1 × 1 mm2-area pixel fabricated using the p-CuI thin film at the iodination temperature of 15 °C and the n-MgZnO QDs at the Mg alloying concentration of 2.7 at. % exhibited the strongest violet emissions at 6 V.
Original language | English |
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Pages (from-to) | 6037-6047 |
Number of pages | 11 |
Journal | ACS Applied Materials and Interfaces |
Volume | 12 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2020 Feb 5 |
Bibliographical note
Funding Information:This work was supported by Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-MA1901-01.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)