Visible photoluminescence from Si ion-beam-mixed SiO 2/Si/SiO2 layers deposited by e-beam evaporation

J. H. Son, H. B. Kim, C. N. Whang, M. C. Sung, K. Jeong, S. Im, K. H. Chae

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.

Original languageEnglish
Pages (from-to)346-349
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume216
Issue number1-4
DOIs
Publication statusPublished - 2004 Feb 1
EventProceedings of the E-MRS 2003 Symposium E on Ion Beams - Strasbourg, France
Duration: 2003 Jun 102003 Jun 13

Fingerprint

Ion beams
Photoluminescence
Evaporation
ion beams
evaporation
photoluminescence
Annealing
annealing
Nanocrystals
Sputtering
nanocrystals
sputtering
Ions
room temperature
ions
Temperature

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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title = "Visible photoluminescence from Si ion-beam-mixed SiO 2/Si/SiO2 layers deposited by e-beam evaporation",
abstract = "The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.",
author = "Son, {J. H.} and Kim, {H. B.} and Whang, {C. N.} and Sung, {M. C.} and K. Jeong and S. Im and Chae, {K. H.}",
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Visible photoluminescence from Si ion-beam-mixed SiO 2/Si/SiO2 layers deposited by e-beam evaporation. / Son, J. H.; Kim, H. B.; Whang, C. N.; Sung, M. C.; Jeong, K.; Im, S.; Chae, K. H.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 216, No. 1-4, 01.02.2004, p. 346-349.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Visible photoluminescence from Si ion-beam-mixed SiO 2/Si/SiO2 layers deposited by e-beam evaporation

AU - Son, J. H.

AU - Kim, H. B.

AU - Whang, C. N.

AU - Sung, M. C.

AU - Jeong, K.

AU - Im, S.

AU - Chae, K. H.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.

AB - The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.

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SP - 346

EP - 349

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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