The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2004 Feb|
|Event||Proceedings of the E-MRS 2003 Symposium E on Ion Beams - Strasbourg, France|
Duration: 2003 Jun 10 → 2003 Jun 13
Bibliographical noteFunding Information:
This work was supported by KOSEF through the Atomic-scale Surface Science Research Center at Yonsei University.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics