Visible photoluminescence from Si ion-beam-mixed SiO 2/Si/SiO2 layers deposited by e-beam evaporation

J. H. Son, H. B. Kim, C. N. Whang, M. C. Sung, K. Jeong, S. Im, K. H. Chae

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.

Original languageEnglish
Pages (from-to)346-349
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume216
Issue number1-4
DOIs
Publication statusPublished - 2004 Feb
EventProceedings of the E-MRS 2003 Symposium E on Ion Beams - Strasbourg, France
Duration: 2003 Jun 102003 Jun 13

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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