Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

K. H. Chae, J. H. Son, G. S. Chang, H. B. Kim, J. Y. Jeong, Seongil Im, J. H. Song, K. J. Kim, H. K. Kim, C. N. Whang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

Original languageEnglish
Pages (from-to)1239-1243
Number of pages5
JournalNanostructured Materials
Volume11
Issue number8
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Nanocrystals
Ion beams
Photoluminescence
nanocrystals
ion beams
Silicon
photoluminescence
Luminescence
luminescence
silicon
matrices
High resolution transmission electron microscopy
Ion implantation
ion implantation
transmission electron microscopy
Lasers
high resolution
lasers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Chae, K. H., Son, J. H., Chang, G. S., Kim, H. B., Jeong, J. Y., Im, S., ... Whang, C. N. (1999). Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers. Nanostructured Materials, 11(8), 1239-1243. https://doi.org/10.1016/S0965-9773(99)00414-6
Chae, K. H. ; Son, J. H. ; Chang, G. S. ; Kim, H. B. ; Jeong, J. Y. ; Im, Seongil ; Song, J. H. ; Kim, K. J. ; Kim, H. K. ; Whang, C. N. / Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers. In: Nanostructured Materials. 1999 ; Vol. 11, No. 8. pp. 1239-1243.
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abstract = "Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.",
author = "Chae, {K. H.} and Son, {J. H.} and Chang, {G. S.} and Kim, {H. B.} and Jeong, {J. Y.} and Seongil Im and Song, {J. H.} and Kim, {K. J.} and Kim, {H. K.} and Whang, {C. N.}",
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Chae, KH, Son, JH, Chang, GS, Kim, HB, Jeong, JY, Im, S, Song, JH, Kim, KJ, Kim, HK & Whang, CN 1999, 'Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers', Nanostructured Materials, vol. 11, no. 8, pp. 1239-1243. https://doi.org/10.1016/S0965-9773(99)00414-6

Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers. / Chae, K. H.; Son, J. H.; Chang, G. S.; Kim, H. B.; Jeong, J. Y.; Im, Seongil; Song, J. H.; Kim, K. J.; Kim, H. K.; Whang, C. N.

In: Nanostructured Materials, Vol. 11, No. 8, 01.01.1999, p. 1239-1243.

Research output: Contribution to journalArticle

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T1 - Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

AU - Chae, K. H.

AU - Son, J. H.

AU - Chang, G. S.

AU - Kim, H. B.

AU - Jeong, J. Y.

AU - Im, Seongil

AU - Song, J. H.

AU - Kim, K. J.

AU - Kim, H. K.

AU - Whang, C. N.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

AB - Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

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