Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

K. H. Chae, J. H. Son, G. S. Chang, H. B. Kim, J. Y. Jeong, S. Im, J. H. Song, K. J. Kim, H. K. Kim, C. N. Whang

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Abstract

Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

Original languageEnglish
Pages (from-to)1239-1243
Number of pages5
JournalNanostructured Materials
Volume11
Issue number8
DOIs
Publication statusPublished - 1999 Nov

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Chae, K. H., Son, J. H., Chang, G. S., Kim, H. B., Jeong, J. Y., Im, S., Song, J. H., Kim, K. J., Kim, H. K., & Whang, C. N. (1999). Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers. Nanostructured Materials, 11(8), 1239-1243. https://doi.org/10.1016/S0965-9773(99)00414-6