Visualizing atomic-scale negative differential resistance in bilayer graphene

Keun Su Kim, Tae Hwan Kim, Andrew L. Walter, Thomas Seyller, Han Woong Yeom, Eli Rotenberg, Aaron Bostwick

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.

Original languageEnglish
Article number036804
JournalPhysical Review Letters
Volume110
Issue number3
DOIs
Publication statusPublished - 2013 Jan 18

Fingerprint

graphene
trucks
electronic spectra
silicon carbides
sublattices
scanning tunneling microscopy
emerging
interference
electric fields
high resolution
defects
cells
spectroscopy
electrons
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, K. S., Kim, T. H., Walter, A. L., Seyller, T., Yeom, H. W., Rotenberg, E., & Bostwick, A. (2013). Visualizing atomic-scale negative differential resistance in bilayer graphene. Physical Review Letters, 110(3), [036804]. https://doi.org/10.1103/PhysRevLett.110.036804
Kim, Keun Su ; Kim, Tae Hwan ; Walter, Andrew L. ; Seyller, Thomas ; Yeom, Han Woong ; Rotenberg, Eli ; Bostwick, Aaron. / Visualizing atomic-scale negative differential resistance in bilayer graphene. In: Physical Review Letters. 2013 ; Vol. 110, No. 3.
@article{a3a1713161234eb199a32297762a4bee,
title = "Visualizing atomic-scale negative differential resistance in bilayer graphene",
abstract = "We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.",
author = "Kim, {Keun Su} and Kim, {Tae Hwan} and Walter, {Andrew L.} and Thomas Seyller and Yeom, {Han Woong} and Eli Rotenberg and Aaron Bostwick",
year = "2013",
month = "1",
day = "18",
doi = "10.1103/PhysRevLett.110.036804",
language = "English",
volume = "110",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "3",

}

Kim, KS, Kim, TH, Walter, AL, Seyller, T, Yeom, HW, Rotenberg, E & Bostwick, A 2013, 'Visualizing atomic-scale negative differential resistance in bilayer graphene', Physical Review Letters, vol. 110, no. 3, 036804. https://doi.org/10.1103/PhysRevLett.110.036804

Visualizing atomic-scale negative differential resistance in bilayer graphene. / Kim, Keun Su; Kim, Tae Hwan; Walter, Andrew L.; Seyller, Thomas; Yeom, Han Woong; Rotenberg, Eli; Bostwick, Aaron.

In: Physical Review Letters, Vol. 110, No. 3, 036804, 18.01.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Visualizing atomic-scale negative differential resistance in bilayer graphene

AU - Kim, Keun Su

AU - Kim, Tae Hwan

AU - Walter, Andrew L.

AU - Seyller, Thomas

AU - Yeom, Han Woong

AU - Rotenberg, Eli

AU - Bostwick, Aaron

PY - 2013/1/18

Y1 - 2013/1/18

N2 - We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.

AB - We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.

UR - http://www.scopus.com/inward/record.url?scp=84872739806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872739806&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.110.036804

DO - 10.1103/PhysRevLett.110.036804

M3 - Article

VL - 110

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 3

M1 - 036804

ER -