Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3

Min Kyu Yang, Kyooho Jung, Yongmin Kim, Tae Kuk Ko, Hyunsik Im, Jae Wan Park, Jeon Kook Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.

Original languageEnglish
Article number111101
JournalJapanese Journal of Applied Physics
Volume49
Issue number11
DOIs
Publication statusPublished - 2010 Nov 1

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Electric potential
electric potential
pulses
pulse amplitude
low resistance
high resistance
pulse duration

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yang, Min Kyu ; Jung, Kyooho ; Kim, Yongmin ; Ko, Tae Kuk ; Im, Hyunsik ; Park, Jae Wan ; Lee, Jeon Kook. / Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 11.
@article{d35019aaebe04fe79ce283b1bd7ce6b5,
title = "Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3",
abstract = "The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.",
author = "Yang, {Min Kyu} and Kyooho Jung and Yongmin Kim and Ko, {Tae Kuk} and Hyunsik Im and Park, {Jae Wan} and Lee, {Jeon Kook}",
year = "2010",
month = "11",
day = "1",
doi = "10.1143/JJAP.49.111101",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "11",

}

Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3. / Yang, Min Kyu; Jung, Kyooho; Kim, Yongmin; Ko, Tae Kuk; Im, Hyunsik; Park, Jae Wan; Lee, Jeon Kook.

In: Japanese Journal of Applied Physics, Vol. 49, No. 11, 111101, 01.11.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3

AU - Yang, Min Kyu

AU - Jung, Kyooho

AU - Kim, Yongmin

AU - Ko, Tae Kuk

AU - Im, Hyunsik

AU - Park, Jae Wan

AU - Lee, Jeon Kook

PY - 2010/11/1

Y1 - 2010/11/1

N2 - The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.

AB - The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=79551626648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551626648&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.111101

DO - 10.1143/JJAP.49.111101

M3 - Article

AN - SCOPUS:79551626648

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11

M1 - 111101

ER -