W-band low-loss wafer-scale package for RF MEMS

Byung Wook Min, Gabriel M. Rebeiz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper reports on the design and fabrication of a wafer-scale package for RF MEMS devices at W-band. Coplanar waveguide (CPW) lines on a high resistivity silicon wafer are covered with another silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric interlayer for CPW feedthroughs underneath the gold sealing ring. A 130 μm high cavity is etched in the cap wafer to remove an impact of capping wafer on CPW lines or RF MEMS components. The designed feedthrough has an insertion loss of 0.19-0.26 dB at 75-110 GHz with a return loss of < -20 dB (per transition). The gold sealing ring is connected to the CPW ground to eliminate any parasitic ring effect of the gold sealing ring. The whole package has a measured insertion loss of 0.6-0.8 dB and return loss of < -20 dB at 75-110 GHz.

Original languageEnglish
Title of host publicationGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages589-592
Number of pages4
Volume2005
Publication statusPublished - 2005 Dec 1
EventGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
Duration: 2005 Oct 32005 Oct 4

Other

OtherGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
CountryFrance
CityParis
Period05/10/305/10/4

Fingerprint

Coplanar waveguides
MEMS
Gold
Telephone lines
Insertion losses
Silicon wafers
Antenna grounds
Compaction
Fabrication
Oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Min, B. W., & Rebeiz, G. M. (2005). W-band low-loss wafer-scale package for RF MEMS. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium (Vol. 2005, pp. 589-592)
Min, Byung Wook ; Rebeiz, Gabriel M. / W-band low-loss wafer-scale package for RF MEMS. GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. Vol. 2005 2005. pp. 589-592
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Min, BW & Rebeiz, GM 2005, W-band low-loss wafer-scale package for RF MEMS. in GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. vol. 2005, pp. 589-592, GAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Paris, France, 05/10/3.

W-band low-loss wafer-scale package for RF MEMS. / Min, Byung Wook; Rebeiz, Gabriel M.

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. Vol. 2005 2005. p. 589-592.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This paper reports on the design and fabrication of a wafer-scale package for RF MEMS devices at W-band. Coplanar waveguide (CPW) lines on a high resistivity silicon wafer are covered with another silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric interlayer for CPW feedthroughs underneath the gold sealing ring. A 130 μm high cavity is etched in the cap wafer to remove an impact of capping wafer on CPW lines or RF MEMS components. The designed feedthrough has an insertion loss of 0.19-0.26 dB at 75-110 GHz with a return loss of < -20 dB (per transition). The gold sealing ring is connected to the CPW ground to eliminate any parasitic ring effect of the gold sealing ring. The whole package has a measured insertion loss of 0.6-0.8 dB and return loss of < -20 dB at 75-110 GHz.

AB - This paper reports on the design and fabrication of a wafer-scale package for RF MEMS devices at W-band. Coplanar waveguide (CPW) lines on a high resistivity silicon wafer are covered with another silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric interlayer for CPW feedthroughs underneath the gold sealing ring. A 130 μm high cavity is etched in the cap wafer to remove an impact of capping wafer on CPW lines or RF MEMS components. The designed feedthrough has an insertion loss of 0.19-0.26 dB at 75-110 GHz with a return loss of < -20 dB (per transition). The gold sealing ring is connected to the CPW ground to eliminate any parasitic ring effect of the gold sealing ring. The whole package has a measured insertion loss of 0.6-0.8 dB and return loss of < -20 dB at 75-110 GHz.

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Min BW, Rebeiz GM. W-band low-loss wafer-scale package for RF MEMS. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. Vol. 2005. 2005. p. 589-592