Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator

J. W. Roh, J. S. Yang, S. H. Ok, D. H. Woo, Y. T. Byun, Y. M. Jhon, T. Mizumoto, W. Y. Lee, S. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O2 plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.

Original languageEnglish
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies X
DOIs
Publication statusPublished - 2006 May 25
EventIntegrated Optics: Devices, Materials, and Technologies X - San Jose, CA, United States
Duration: 2006 Jan 232006 Jan 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6123
ISSN (Print)0277-786X

Other

OtherIntegrated Optics: Devices, Materials, and Technologies X
CountryUnited States
CitySan Jose, CA
Period06/1/2306/1/25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Roh, J. W., Yang, J. S., Ok, S. H., Woo, D. H., Byun, Y. T., Jhon, Y. M., Mizumoto, T., Lee, W. Y., & Lee, S. (2006). Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator. In Integrated Optics: Devices, Materials, and Technologies X [612316] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6123). https://doi.org/10.1117/12.648371