Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator

J. W. Roh, J. S. Yang, S. H. Ok, D. H. Woo, Y. T. Byun, Y. M. Jhon, T. Mizumoto, Wooyoung Lee, S. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O2 plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.

Original languageEnglish
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies X
Volume6123
DOIs
Publication statusPublished - 2006 May 25
EventIntegrated Optics: Devices, Materials, and Technologies X - San Jose, CA, United States
Duration: 2006 Jan 232006 Jan 25

Other

OtherIntegrated Optics: Devices, Materials, and Technologies X
CountryUnited States
CitySan Jose, CA
Period06/1/2306/1/25

Fingerprint

Waveguide isolators
Wafer bonding
Optical Waveguides
isolators
yttrium-iron garnet
Optical waveguides
optical waveguides
Wafer
Activation
Plasma
Chemical activation
wafers
activation
Plasmas
Garnets
III-V Semiconductors
gadolinium-gallium garnet
Semiconductor materials
Fabrication
Thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Roh, J. W., Yang, J. S., Ok, S. H., Woo, D. H., Byun, Y. T., Jhon, Y. M., ... Lee, S. (2006). Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator. In Integrated Optics: Devices, Materials, and Technologies X (Vol. 6123). [612316] https://doi.org/10.1117/12.648371
Roh, J. W. ; Yang, J. S. ; Ok, S. H. ; Woo, D. H. ; Byun, Y. T. ; Jhon, Y. M. ; Mizumoto, T. ; Lee, Wooyoung ; Lee, S. / Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator. Integrated Optics: Devices, Materials, and Technologies X. Vol. 6123 2006.
@inproceedings{366f2e5dc99a4f4384e186128390c98b,
title = "Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator",
abstract = "The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O2 plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.",
author = "Roh, {J. W.} and Yang, {J. S.} and Ok, {S. H.} and Woo, {D. H.} and Byun, {Y. T.} and Jhon, {Y. M.} and T. Mizumoto and Wooyoung Lee and S. Lee",
year = "2006",
month = "5",
day = "25",
doi = "10.1117/12.648371",
language = "English",
isbn = "0819461652",
volume = "6123",
booktitle = "Integrated Optics",

}

Roh, JW, Yang, JS, Ok, SH, Woo, DH, Byun, YT, Jhon, YM, Mizumoto, T, Lee, W & Lee, S 2006, Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator. in Integrated Optics: Devices, Materials, and Technologies X. vol. 6123, 612316, Integrated Optics: Devices, Materials, and Technologies X, San Jose, CA, United States, 06/1/23. https://doi.org/10.1117/12.648371

Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator. / Roh, J. W.; Yang, J. S.; Ok, S. H.; Woo, D. H.; Byun, Y. T.; Jhon, Y. M.; Mizumoto, T.; Lee, Wooyoung; Lee, S.

Integrated Optics: Devices, Materials, and Technologies X. Vol. 6123 2006. 612316.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator

AU - Roh, J. W.

AU - Yang, J. S.

AU - Ok, S. H.

AU - Woo, D. H.

AU - Byun, Y. T.

AU - Jhon, Y. M.

AU - Mizumoto, T.

AU - Lee, Wooyoung

AU - Lee, S.

PY - 2006/5/25

Y1 - 2006/5/25

N2 - The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O2 plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.

AB - The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O2 plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.

UR - http://www.scopus.com/inward/record.url?scp=33646740334&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646740334&partnerID=8YFLogxK

U2 - 10.1117/12.648371

DO - 10.1117/12.648371

M3 - Conference contribution

SN - 0819461652

SN - 9780819461650

VL - 6123

BT - Integrated Optics

ER -

Roh JW, Yang JS, Ok SH, Woo DH, Byun YT, Jhon YM et al. Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator. In Integrated Optics: Devices, Materials, and Technologies X. Vol. 6123. 2006. 612316 https://doi.org/10.1117/12.648371