Abstract
We developed a patternable synthesis method of wafer-scale NbS2, which can be applied for the fabrication of source and drain electrodes of p- and n-type organic field-effect transistors (OFETs) and logic gates. NbS2 film with high uniformity was synthesized directly on a 2-in Si wafer. NbS2 patterns of various sizes and shapes were readily synthesized onto an entire wafer. OFETs with NbS2 electrodes exhibited superior performances to those with conventional metal electrodes. The superior performance of the former OFETs was primarily a result of the enhanced crystallinity of the organic semiconductor layer deposited onto the NbS2 electrode surface. Furthermore, organic complementary circuits such as NOT, NAND, and NOR gates were successfully assembled using the resulting OFETs as a proof of applicability of these devices to complex logic circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 8599-8606 |
| Number of pages | 8 |
| Journal | Journal of Materials Chemistry C |
| Volume | 7 |
| Issue number | 28 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry
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Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates. / Choi, Yongsuk; Bark, Hunyoung; Kang, Boseok; Lee, Myeongjae; Kim, Bongsoo; Lea, Sungjoo; Lea, Changgu; Cho, Jeong Ho.
In: Journal of Materials Chemistry C, Vol. 7, No. 28, 01.01.2019, p. 8599-8606.Research output: Contribution to journal › Article
TY - JOUR
T1 - Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates
AU - Choi, Yongsuk
AU - Bark, Hunyoung
AU - Kang, Boseok
AU - Lee, Myeongjae
AU - Kim, Bongsoo
AU - Lea, Sungjoo
AU - Lea, Changgu
AU - Cho, Jeong Ho
PY - 2019/1/1
Y1 - 2019/1/1
N2 - We developed a patternable synthesis method of wafer-scale NbS2, which can be applied for the fabrication of source and drain electrodes of p- and n-type organic field-effect transistors (OFETs) and logic gates. NbS2 film with high uniformity was synthesized directly on a 2-in Si wafer. NbS2 patterns of various sizes and shapes were readily synthesized onto an entire wafer. OFETs with NbS2 electrodes exhibited superior performances to those with conventional metal electrodes. The superior performance of the former OFETs was primarily a result of the enhanced crystallinity of the organic semiconductor layer deposited onto the NbS2 electrode surface. Furthermore, organic complementary circuits such as NOT, NAND, and NOR gates were successfully assembled using the resulting OFETs as a proof of applicability of these devices to complex logic circuits.
AB - We developed a patternable synthesis method of wafer-scale NbS2, which can be applied for the fabrication of source and drain electrodes of p- and n-type organic field-effect transistors (OFETs) and logic gates. NbS2 film with high uniformity was synthesized directly on a 2-in Si wafer. NbS2 patterns of various sizes and shapes were readily synthesized onto an entire wafer. OFETs with NbS2 electrodes exhibited superior performances to those with conventional metal electrodes. The superior performance of the former OFETs was primarily a result of the enhanced crystallinity of the organic semiconductor layer deposited onto the NbS2 electrode surface. Furthermore, organic complementary circuits such as NOT, NAND, and NOR gates were successfully assembled using the resulting OFETs as a proof of applicability of these devices to complex logic circuits.
UR - http://www.scopus.com/inward/record.url?scp=85069756603&partnerID=8YFLogxK
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U2 - 10.1039/c9tc02177a
DO - 10.1039/c9tc02177a
M3 - Article
AN - SCOPUS:85069756603
VL - 7
SP - 8599
EP - 8606
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 28
ER -