We developed a patternable synthesis method of wafer-scale NbS2, which can be applied for the fabrication of source and drain electrodes of p- and n-type organic field-effect transistors (OFETs) and logic gates. NbS2 film with high uniformity was synthesized directly on a 2-in Si wafer. NbS2 patterns of various sizes and shapes were readily synthesized onto an entire wafer. OFETs with NbS2 electrodes exhibited superior performances to those with conventional metal electrodes. The superior performance of the former OFETs was primarily a result of the enhanced crystallinity of the organic semiconductor layer deposited onto the NbS2 electrode surface. Furthermore, organic complementary circuits such as NOT, NAND, and NOR gates were successfully assembled using the resulting OFETs as a proof of applicability of these devices to complex logic circuits.
Bibliographical noteFunding Information:
This work was supported by a grant from by Construction Technology Research Project (Grant No. 18SCIP-B146646-01) funded by the Ministry of Land, Infrastructure and Transport, the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (2013M3A6A5073173), and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A4A1015400), Korea.
© The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Materials Chemistry