Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends

Insung Bae, Sun Kak Hwang, Richard Hahnkee Kim, Seok Ju Kang, Cheolmin Park

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface.

Original languageEnglish
Pages (from-to)10696-10704
Number of pages9
JournalACS Applied Materials and Interfaces
Volume5
Issue number21
DOIs
Publication statusPublished - 2013 Nov 13

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Polymer blends
Ferroelectric materials
Polymers
Gates (transistor)
Data storage equipment
Molecules
Semiconducting films
Polydimethylsiloxane
Printing
Substrates
Field effect transistors
Adhesives
Evaporation
Durability
Fabrication
Thin films
Electric potential
Costs

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Bae, Insung ; Hwang, Sun Kak ; Kim, Richard Hahnkee ; Kang, Seok Ju ; Park, Cheolmin. / Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 21. pp. 10696-10704.
@article{1327e1a78c8d4e928dfbf4b20d36cc1a,
title = "Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends",
abstract = "Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface.",
author = "Insung Bae and Hwang, {Sun Kak} and Kim, {Richard Hahnkee} and Kang, {Seok Ju} and Cheolmin Park",
year = "2013",
month = "11",
day = "13",
doi = "10.1021/am402852y",
language = "English",
volume = "5",
pages = "10696--10704",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "21",

}

Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends. / Bae, Insung; Hwang, Sun Kak; Kim, Richard Hahnkee; Kang, Seok Ju; Park, Cheolmin.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 21, 13.11.2013, p. 10696-10704.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends

AU - Bae, Insung

AU - Hwang, Sun Kak

AU - Kim, Richard Hahnkee

AU - Kang, Seok Ju

AU - Park, Cheolmin

PY - 2013/11/13

Y1 - 2013/11/13

N2 - Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface.

AB - Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface.

UR - http://www.scopus.com/inward/record.url?scp=84887591081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887591081&partnerID=8YFLogxK

U2 - 10.1021/am402852y

DO - 10.1021/am402852y

M3 - Article

C2 - 24070419

AN - SCOPUS:84887591081

VL - 5

SP - 10696

EP - 10704

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 21

ER -