Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Yi Zheng, Guang Xin Ni, Sukang Bae, Chun Xiao Cong, Orhan Kahya, Chee Tat Toh, Hye Ri Kim, Danho Im, Ting Yu, Jong Hyun Ahn, Byung Hee Hong, Barbaros Özyilmaz

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Abstract

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO2 have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical-vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT), we demonstrate ultra-low-voltage operation of graphene field effect transistors within ±1 V with maximum doping exceeding 1013 cm - 2 and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.

Original languageEnglish
Article number17002
JournalEPL
Volume93
Issue number1
DOIs
Publication statusPublished - 2011 Jan

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Zheng, Y., Ni, G. X., Bae, S., Cong, C. X., Kahya, O., Toh, C. T., Kim, H. R., Im, D., Yu, T., Ahn, J. H., Hong, B. H., & Özyilmaz, B. (2011). Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics. EPL, 93(1), [17002]. https://doi.org/10.1209/0295-5075/93/17002