Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO₂ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical-vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr_0.3Ti_0.7)O₃ (PZT), we demonstrate ultra-low-voltage operation of graphene field effect transistors within ±1 V with maximum doping exceeding 10¹³ cm ^{- 2} and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.