Abstract
Wafer scale imprint lithography is introduced and demonstrated. Pattern features down to 100 nm in size are shown to be lithographed over the entire area of a silicon wafer 4 in. in diameter. An asymmetric heating and quenching cycle is used for the pattern fidelity. Simple mechanical arrangements make the wafer-scale lithography possible.
Original language | English |
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Pages (from-to) | 2599-2601 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 17 |
DOIs | |
Publication status | Published - 1999 Oct 25 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)