Wafer scale imprint lithography is introduced and demonstrated. Pattern features down to 100 nm in size are shown to be lithographed over the entire area of a silicon wafer 4 in. in diameter. An asymmetric heating and quenching cycle is used for the pattern fidelity. Simple mechanical arrangements make the wafer-scale lithography possible.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1999 Oct 25|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)