Wafer-scale synthesis and transfer of graphene films

Youngbin Lee, Sukang Bae, Houk Jang, Sukjae Jang, Shou En Zhu, Sung Hyun Sim, Young Il Song, Byung Hee Hong, Jong Hyun Ahn

Research output: Contribution to journalArticle

842 Citations (Scopus)

Abstract

We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 ± 70 and 550 ±50 cm 2/(V s) at drain bias of-0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was ̃6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

Original languageEnglish
Pages (from-to)490-493
Number of pages4
JournalNano letters
Volume10
Issue number2
DOIs
Publication statusPublished - 2010 Feb 10

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Lee, Y., Bae, S., Jang, H., Jang, S., Zhu, S. E., Sim, S. H., Song, Y. I., Hong, B. H., & Ahn, J. H. (2010). Wafer-scale synthesis and transfer of graphene films. Nano letters, 10(2), 490-493. https://doi.org/10.1021/nl903272n