Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system

Jaehyun Yang, Yeahyun Gu, Eunha Lee, Hyangsook Lee, Sang Han Park, Mann Ho Cho, Yong Ho Kim, Yong Hoon Kim, Hyoungsub Kim

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

The wafer-scale synthesis of two-dimensional molybdenum disulfide (MoS2) films, with high layer-controllability and uniformity, remains a significant challenge in the fields of nano and optoelectronics. Here, we report the highly thickness controllable growth of uniform MoS2 thin films on the wafer-scale via a spin-coating route. Formulation of a dimethylformamide-based MoS2 precursor solution mixed with additional amine- and amino alcohol-based solvents (n-butylamine and 2-aminoethanol) allowed for the formation of a uniform coating of MoS2 thin films over a 2 inch wafer-scale SiO2/Si substrate. In addition, facile control of the average number of stacking layers is demonstrated by simply manipulating the concentration of the precursor solution. Various characterization results reveal that the synthesized MoS2 film has wafer-scale homogeneity with excellent crystalline quality and a stoichiometric chemical composition. To further demonstrate possible device applications, a mostly penta-layered MoS2 thin film was integrated into a top-gated field-effect transistor as the channel layer and we also successfully transferred our films onto transparent/flexible substrates.

Original languageEnglish
Pages (from-to)9311-9319
Number of pages9
JournalNanoscale
Volume7
Issue number20
DOIs
Publication statusPublished - 2015 May 28

Fingerprint

Dimethylformamide
Ethanolamine
Thin films
Processing
Amino alcohols
Amino Alcohols
Spin coating
Substrates
Field effect transistors
Controllability
Optoelectronic devices
Molybdenum
Amines
Crystalline materials
Coatings
Chemical analysis
n-butylamine

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Yang, Jaehyun ; Gu, Yeahyun ; Lee, Eunha ; Lee, Hyangsook ; Park, Sang Han ; Cho, Mann Ho ; Kim, Yong Ho ; Kim, Yong Hoon ; Kim, Hyoungsub. / Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system. In: Nanoscale. 2015 ; Vol. 7, No. 20. pp. 9311-9319.
@article{cddd2ce322d945fdb5f7736af2a8e2bd,
title = "Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system",
abstract = "The wafer-scale synthesis of two-dimensional molybdenum disulfide (MoS2) films, with high layer-controllability and uniformity, remains a significant challenge in the fields of nano and optoelectronics. Here, we report the highly thickness controllable growth of uniform MoS2 thin films on the wafer-scale via a spin-coating route. Formulation of a dimethylformamide-based MoS2 precursor solution mixed with additional amine- and amino alcohol-based solvents (n-butylamine and 2-aminoethanol) allowed for the formation of a uniform coating of MoS2 thin films over a 2 inch wafer-scale SiO2/Si substrate. In addition, facile control of the average number of stacking layers is demonstrated by simply manipulating the concentration of the precursor solution. Various characterization results reveal that the synthesized MoS2 film has wafer-scale homogeneity with excellent crystalline quality and a stoichiometric chemical composition. To further demonstrate possible device applications, a mostly penta-layered MoS2 thin film was integrated into a top-gated field-effect transistor as the channel layer and we also successfully transferred our films onto transparent/flexible substrates.",
author = "Jaehyun Yang and Yeahyun Gu and Eunha Lee and Hyangsook Lee and Park, {Sang Han} and Cho, {Mann Ho} and Kim, {Yong Ho} and Kim, {Yong Hoon} and Hyoungsub Kim",
year = "2015",
month = "5",
day = "28",
doi = "10.1039/c5nr01486g",
language = "English",
volume = "7",
pages = "9311--9319",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "20",

}

Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system. / Yang, Jaehyun; Gu, Yeahyun; Lee, Eunha; Lee, Hyangsook; Park, Sang Han; Cho, Mann Ho; Kim, Yong Ho; Kim, Yong Hoon; Kim, Hyoungsub.

In: Nanoscale, Vol. 7, No. 20, 28.05.2015, p. 9311-9319.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system

AU - Yang, Jaehyun

AU - Gu, Yeahyun

AU - Lee, Eunha

AU - Lee, Hyangsook

AU - Park, Sang Han

AU - Cho, Mann Ho

AU - Kim, Yong Ho

AU - Kim, Yong Hoon

AU - Kim, Hyoungsub

PY - 2015/5/28

Y1 - 2015/5/28

N2 - The wafer-scale synthesis of two-dimensional molybdenum disulfide (MoS2) films, with high layer-controllability and uniformity, remains a significant challenge in the fields of nano and optoelectronics. Here, we report the highly thickness controllable growth of uniform MoS2 thin films on the wafer-scale via a spin-coating route. Formulation of a dimethylformamide-based MoS2 precursor solution mixed with additional amine- and amino alcohol-based solvents (n-butylamine and 2-aminoethanol) allowed for the formation of a uniform coating of MoS2 thin films over a 2 inch wafer-scale SiO2/Si substrate. In addition, facile control of the average number of stacking layers is demonstrated by simply manipulating the concentration of the precursor solution. Various characterization results reveal that the synthesized MoS2 film has wafer-scale homogeneity with excellent crystalline quality and a stoichiometric chemical composition. To further demonstrate possible device applications, a mostly penta-layered MoS2 thin film was integrated into a top-gated field-effect transistor as the channel layer and we also successfully transferred our films onto transparent/flexible substrates.

AB - The wafer-scale synthesis of two-dimensional molybdenum disulfide (MoS2) films, with high layer-controllability and uniformity, remains a significant challenge in the fields of nano and optoelectronics. Here, we report the highly thickness controllable growth of uniform MoS2 thin films on the wafer-scale via a spin-coating route. Formulation of a dimethylformamide-based MoS2 precursor solution mixed with additional amine- and amino alcohol-based solvents (n-butylamine and 2-aminoethanol) allowed for the formation of a uniform coating of MoS2 thin films over a 2 inch wafer-scale SiO2/Si substrate. In addition, facile control of the average number of stacking layers is demonstrated by simply manipulating the concentration of the precursor solution. Various characterization results reveal that the synthesized MoS2 film has wafer-scale homogeneity with excellent crystalline quality and a stoichiometric chemical composition. To further demonstrate possible device applications, a mostly penta-layered MoS2 thin film was integrated into a top-gated field-effect transistor as the channel layer and we also successfully transferred our films onto transparent/flexible substrates.

UR - http://www.scopus.com/inward/record.url?scp=84929441010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929441010&partnerID=8YFLogxK

U2 - 10.1039/c5nr01486g

DO - 10.1039/c5nr01486g

M3 - Article

AN - SCOPUS:84929441010

VL - 7

SP - 9311

EP - 9319

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 20

ER -