Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications

Hyun Kum, Han Kyu Seong, Wantae Lim, Daemyung Chun, Young Il Kim, Youngsoo Park, Geonwook Yoo

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visible extended defects over a 100 mm sapphire (Al2O3) wafer. An ex-situ study of the growth morphology as a function of growth time for the two self-limiting steps elucidate the growth dynamics, which show that formation of an Ehrlich-Schwoebel barrier and preferential growth in the c-plane direction governs the growth process. This process allows monolithic formation of dimensionally uniform nanowires on templates with varying filling matrix patterns for a variety of novel electronic and optoelectronic applications. A color tunable phosphor-free white light LED with a coaxial architecture is fabricated as a demonstration of the applicability of these nanorods grown by TSSLG.

Original languageEnglish
Article number40893
JournalScientific reports
Volume7
DOIs
Publication statusPublished - 2017 Jan 18

Bibliographical note

Publisher Copyright:
© The Author(s) 2017.

All Science Journal Classification (ASJC) codes

  • General

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