Watching bismuth nanowires grow

Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Kyu Hwan Oh, Peter W. Voorhees, Wooyoung Lee

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report real-time high temperature scanning electron microscopy observations of the growth of bismuth nanowires via the on-film formation of nanowires (OFF-ON) method. These observations provide experimental evidence that thermally induced-stress on a Bi film is the driving force for the growth of Bi nanowires with high aspect ratios, uniform diameter, and high-quality crystallinity. Our results show that immobile grain boundaries in the Bi film are required for the growth of nanowires so that grain broadening resulting in hillock formation can be prevented. This study not only provides an understanding of the underlying mechanism, but also affords a strategy for facilitating nanowire growth by OFF-ON.

Original languageEnglish
Article number043102
JournalApplied Physics Letters
Volume98
Issue number4
DOIs
Publication statusPublished - 2011 Jan 24

Fingerprint

bismuth
nanowires
high aspect ratio
crystallinity
grain boundaries
scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ham, J., Shim, W., Kim, D. H., Oh, K. H., Voorhees, P. W., & Lee, W. (2011). Watching bismuth nanowires grow. Applied Physics Letters, 98(4), [043102]. https://doi.org/10.1063/1.3535956
Ham, Jinhee ; Shim, Wooyoung ; Kim, Do Hyun ; Oh, Kyu Hwan ; Voorhees, Peter W. ; Lee, Wooyoung. / Watching bismuth nanowires grow. In: Applied Physics Letters. 2011 ; Vol. 98, No. 4.
@article{f038974c6d0c4b2cbf1e274afc38f2dc,
title = "Watching bismuth nanowires grow",
abstract = "We report real-time high temperature scanning electron microscopy observations of the growth of bismuth nanowires via the on-film formation of nanowires (OFF-ON) method. These observations provide experimental evidence that thermally induced-stress on a Bi film is the driving force for the growth of Bi nanowires with high aspect ratios, uniform diameter, and high-quality crystallinity. Our results show that immobile grain boundaries in the Bi film are required for the growth of nanowires so that grain broadening resulting in hillock formation can be prevented. This study not only provides an understanding of the underlying mechanism, but also affords a strategy for facilitating nanowire growth by OFF-ON.",
author = "Jinhee Ham and Wooyoung Shim and Kim, {Do Hyun} and Oh, {Kyu Hwan} and Voorhees, {Peter W.} and Wooyoung Lee",
year = "2011",
month = "1",
day = "24",
doi = "10.1063/1.3535956",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Ham, J, Shim, W, Kim, DH, Oh, KH, Voorhees, PW & Lee, W 2011, 'Watching bismuth nanowires grow', Applied Physics Letters, vol. 98, no. 4, 043102. https://doi.org/10.1063/1.3535956

Watching bismuth nanowires grow. / Ham, Jinhee; Shim, Wooyoung; Kim, Do Hyun; Oh, Kyu Hwan; Voorhees, Peter W.; Lee, Wooyoung.

In: Applied Physics Letters, Vol. 98, No. 4, 043102, 24.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Watching bismuth nanowires grow

AU - Ham, Jinhee

AU - Shim, Wooyoung

AU - Kim, Do Hyun

AU - Oh, Kyu Hwan

AU - Voorhees, Peter W.

AU - Lee, Wooyoung

PY - 2011/1/24

Y1 - 2011/1/24

N2 - We report real-time high temperature scanning electron microscopy observations of the growth of bismuth nanowires via the on-film formation of nanowires (OFF-ON) method. These observations provide experimental evidence that thermally induced-stress on a Bi film is the driving force for the growth of Bi nanowires with high aspect ratios, uniform diameter, and high-quality crystallinity. Our results show that immobile grain boundaries in the Bi film are required for the growth of nanowires so that grain broadening resulting in hillock formation can be prevented. This study not only provides an understanding of the underlying mechanism, but also affords a strategy for facilitating nanowire growth by OFF-ON.

AB - We report real-time high temperature scanning electron microscopy observations of the growth of bismuth nanowires via the on-film formation of nanowires (OFF-ON) method. These observations provide experimental evidence that thermally induced-stress on a Bi film is the driving force for the growth of Bi nanowires with high aspect ratios, uniform diameter, and high-quality crystallinity. Our results show that immobile grain boundaries in the Bi film are required for the growth of nanowires so that grain broadening resulting in hillock formation can be prevented. This study not only provides an understanding of the underlying mechanism, but also affords a strategy for facilitating nanowire growth by OFF-ON.

UR - http://www.scopus.com/inward/record.url?scp=79551642748&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551642748&partnerID=8YFLogxK

U2 - 10.1063/1.3535956

DO - 10.1063/1.3535956

M3 - Article

AN - SCOPUS:79551642748

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043102

ER -