Watching bismuth nanowires grow

Jinhee Ham; Wooyoung Shim; Do Hyun Kim; Kyu Hwan Oh; Peter W. Voorhees; Wooyoung Lee

doi:10.1063/1.3535956

Watching bismuth nanowires grow

Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Kyu Hwan Oh, Peter W. Voorhees, Wooyoung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report real-time high temperature scanning electron microscopy observations of the growth of bismuth nanowires via the on-film formation of nanowires (OFF-ON) method. These observations provide experimental evidence that thermally induced-stress on a Bi film is the driving force for the growth of Bi nanowires with high aspect ratios, uniform diameter, and high-quality crystallinity. Our results show that immobile grain boundaries in the Bi film are required for the growth of nanowires so that grain broadening resulting in hillock formation can be prevented. This study not only provides an understanding of the underlying mechanism, but also affords a strategy for facilitating nanowire growth by OFF-ON.

Original language	English
Article number	043102
Journal	Applied Physics Letters
Volume	98
Issue number	4
DOIs	https://doi.org/10.1063/1.3535956
Publication status	Published - 2011 Jan 24

Bibliographical note

Funding Information:
This work was supported by Priority Research Centers Program (Grant No. 2009-0093823) through the National Research Foundation of Korea (NRF), by NRF through National Core Research Center for Nanomedical Technology (Grant No. R15-2004-024-00000-0), and by a grant from “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Education, Science and Technology. J.H. and W.S. contributed equally to this work.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Watching bismuth nanowires grow",

abstract = "We report real-time high temperature scanning electron microscopy observations of the growth of bismuth nanowires via the on-film formation of nanowires (OFF-ON) method. These observations provide experimental evidence that thermally induced-stress on a Bi film is the driving force for the growth of Bi nanowires with high aspect ratios, uniform diameter, and high-quality crystallinity. Our results show that immobile grain boundaries in the Bi film are required for the growth of nanowires so that grain broadening resulting in hillock formation can be prevented. This study not only provides an understanding of the underlying mechanism, but also affords a strategy for facilitating nanowire growth by OFF-ON.",

author = "Jinhee Ham and Wooyoung Shim and Kim, {Do Hyun} and Oh, {Kyu Hwan} and Voorhees, {Peter W.} and Wooyoung Lee",

note = "Funding Information: This work was supported by Priority Research Centers Program (Grant No. 2009-0093823) through the National Research Foundation of Korea (NRF), by NRF through National Core Research Center for Nanomedical Technology (Grant No. R15-2004-024-00000-0), and by a grant from “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Education, Science and Technology. J.H. and W.S. contributed equally to this work.",

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AU - Shim, Wooyoung

AU - Kim, Do Hyun

AU - Oh, Kyu Hwan

AU - Voorhees, Peter W.

AU - Lee, Wooyoung

N1 - Funding Information: This work was supported by Priority Research Centers Program (Grant No. 2009-0093823) through the National Research Foundation of Korea (NRF), by NRF through National Core Research Center for Nanomedical Technology (Grant No. R15-2004-024-00000-0), and by a grant from “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Education, Science and Technology. J.H. and W.S. contributed equally to this work.

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N2 - We report real-time high temperature scanning electron microscopy observations of the growth of bismuth nanowires via the on-film formation of nanowires (OFF-ON) method. These observations provide experimental evidence that thermally induced-stress on a Bi film is the driving force for the growth of Bi nanowires with high aspect ratios, uniform diameter, and high-quality crystallinity. Our results show that immobile grain boundaries in the Bi film are required for the growth of nanowires so that grain broadening resulting in hillock formation can be prevented. This study not only provides an understanding of the underlying mechanism, but also affords a strategy for facilitating nanowire growth by OFF-ON.

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Watching bismuth nanowires grow

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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