Water adsorption effects of nitrate ion coordinated Al2O 3 dielectric for high performance metal-oxide thin-film transistor

Jee Ho Park, Kyongjun Kim, Young Bum Yoo, Si Yun Park, Keon Hee Lim, Keun Ho Lee, Hong Koo Baik, Youn Sang Kim

Research output: Contribution to journalArticle

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Abstract

A solution-processed ionic amorphous Al2O3 dielectric with a low temperature annealing process at 350 °C shows good compatibility and high performance in metal oxide semiconductor thin film transitors (TFTs) such as Li-ZnO TFTs and In-ZnO TFTs. The Li-ZnO/Al2O3 and In-ZnO/Al2O3 TFTs, with solution-processability and low temperature annealing at a maximum of 350 °C, exhibited field-effect mobilities of 46.9 cm2 V-1 s-1 in crystalline Li-ZnO/Al2O3 TFTs and 44.2 cm2 V-1 s-1 in amorphous In-ZnO/Al2O3 TFTs with an on/off current ratio of more than 105. The proton mobile ion, such as hydrogen ion (H+) from chemisorbed water, in the ionic Al 2O3 dielectric remarkably induces a high performance capacitance by the formation of an electrical double layer. The chemisorbed water was monitored by FT-IR and ellipsometric porosimetry measurements. Furthermore, the addition of H2O2 to the ionic Al 2O3 dielectric precursor successfully suppressed the oxygen vacancies in the dielectric layer, which caused the electrical trap and pass, and confirmed the stable operation. These ionic amorphous Al 2O3 dielectrics show good potential as switching TFTs devices in advanced displays, because they can satisfy the various demands of next-generation high-performance TFTs, such as low-cost, solution- processability, and a relatively low-temperature process.

Original languageEnglish
Pages (from-to)7166-7174
Number of pages9
JournalJournal of Materials Chemistry C
Volume1
Issue number43
DOIs
Publication statusPublished - 2013 Nov 21

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Thin film transistors
Nitrates
Oxide films
Metals
Ions
Adsorption
Thin films
Water
Protons
Annealing
Thin film devices
Hydrogen
Oxygen vacancies
Temperature
Capacitance
Display devices
Crystalline materials
Costs

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Park, Jee Ho ; Kim, Kyongjun ; Yoo, Young Bum ; Park, Si Yun ; Lim, Keon Hee ; Lee, Keun Ho ; Baik, Hong Koo ; Kim, Youn Sang. / Water adsorption effects of nitrate ion coordinated Al2O 3 dielectric for high performance metal-oxide thin-film transistor. In: Journal of Materials Chemistry C. 2013 ; Vol. 1, No. 43. pp. 7166-7174.
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abstract = "A solution-processed ionic amorphous Al2O3 dielectric with a low temperature annealing process at 350 °C shows good compatibility and high performance in metal oxide semiconductor thin film transitors (TFTs) such as Li-ZnO TFTs and In-ZnO TFTs. The Li-ZnO/Al2O3 and In-ZnO/Al2O3 TFTs, with solution-processability and low temperature annealing at a maximum of 350 °C, exhibited field-effect mobilities of 46.9 cm2 V-1 s-1 in crystalline Li-ZnO/Al2O3 TFTs and 44.2 cm2 V-1 s-1 in amorphous In-ZnO/Al2O3 TFTs with an on/off current ratio of more than 105. The proton mobile ion, such as hydrogen ion (H+) from chemisorbed water, in the ionic Al 2O3 dielectric remarkably induces a high performance capacitance by the formation of an electrical double layer. The chemisorbed water was monitored by FT-IR and ellipsometric porosimetry measurements. Furthermore, the addition of H2O2 to the ionic Al 2O3 dielectric precursor successfully suppressed the oxygen vacancies in the dielectric layer, which caused the electrical trap and pass, and confirmed the stable operation. These ionic amorphous Al 2O3 dielectrics show good potential as switching TFTs devices in advanced displays, because they can satisfy the various demands of next-generation high-performance TFTs, such as low-cost, solution- processability, and a relatively low-temperature process.",
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Water adsorption effects of nitrate ion coordinated Al2O 3 dielectric for high performance metal-oxide thin-film transistor. / Park, Jee Ho; Kim, Kyongjun; Yoo, Young Bum; Park, Si Yun; Lim, Keon Hee; Lee, Keun Ho; Baik, Hong Koo; Kim, Youn Sang.

In: Journal of Materials Chemistry C, Vol. 1, No. 43, 21.11.2013, p. 7166-7174.

Research output: Contribution to journalArticle

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T1 - Water adsorption effects of nitrate ion coordinated Al2O 3 dielectric for high performance metal-oxide thin-film transistor

AU - Park, Jee Ho

AU - Kim, Kyongjun

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AU - Lee, Keun Ho

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AU - Kim, Youn Sang

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AB - A solution-processed ionic amorphous Al2O3 dielectric with a low temperature annealing process at 350 °C shows good compatibility and high performance in metal oxide semiconductor thin film transitors (TFTs) such as Li-ZnO TFTs and In-ZnO TFTs. The Li-ZnO/Al2O3 and In-ZnO/Al2O3 TFTs, with solution-processability and low temperature annealing at a maximum of 350 °C, exhibited field-effect mobilities of 46.9 cm2 V-1 s-1 in crystalline Li-ZnO/Al2O3 TFTs and 44.2 cm2 V-1 s-1 in amorphous In-ZnO/Al2O3 TFTs with an on/off current ratio of more than 105. The proton mobile ion, such as hydrogen ion (H+) from chemisorbed water, in the ionic Al 2O3 dielectric remarkably induces a high performance capacitance by the formation of an electrical double layer. The chemisorbed water was monitored by FT-IR and ellipsometric porosimetry measurements. Furthermore, the addition of H2O2 to the ionic Al 2O3 dielectric precursor successfully suppressed the oxygen vacancies in the dielectric layer, which caused the electrical trap and pass, and confirmed the stable operation. These ionic amorphous Al 2O3 dielectrics show good potential as switching TFTs devices in advanced displays, because they can satisfy the various demands of next-generation high-performance TFTs, such as low-cost, solution- processability, and a relatively low-temperature process.

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