We have investigated the atomic layer deposition (ALD) of GeO2 thin films that dissolve in water rapidly and have excellent electrical properties for use in memory devices. The growth characteristics based on surface reactions during the ALD process are discussed by correlation with experimental results and atomistic theoretical calculation. Compared to sputtered GeO2 films, the ALD-grown GeO2 is perfect, pure, and water-soluble at room temperature and has better electrical properties for use as the dielectric layer in memory devices. The superior film properties of ALD GeO2 are attributed to the higher film density, high purity, low roughness, and highly stoichiometric film composition. Finally, we demonstrate the fabrication of charge-trapping memory (CTM) devices with ALD GeO2, and that the electrical information stored in the CTM can be eliminated immediately by exposure to one droplet of water at room temperature. Thus, ALD GeO2 could find widespread application in the fabrication of secure memory devices.
Bibliographical noteFunding Information:
The Ge precursors used in this work were provided by Air Liquide Korea Company. This work was conducted under the support of the Korea Institute of Industrial Technology as fundamental technology development project (KITECH EO-17-0042), and private Industry cooperation R&D promotion project (KITECH EE-17-0019), and this research was supported by the MOTIE (Ministry of Trade, Industry & Energy) (10080643) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.
© 2018 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Chemistry