Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Jae Sang Heo, Jeong Wan Jo, Jingu Kang, Chan Yong Jeong, Hu Young Jeong, Sung Kyu Kim, Kwanpyo Kim, Hyuck In Kwon, Jaekyun Kim, Yong Hoon Kim, Myung Gil Kim, Sung Kyu Park

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 109, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm2 V-1 s-1, and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.

Original languageEnglish
Pages (from-to)10403-10412
Number of pages10
JournalACS Applied Materials and Interfaces
Volume8
Issue number16
DOIs
Publication statusPublished - 2016 Apr 27

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Zinc Oxide
Gallium
Indium
Thin film transistors
Zinc oxide
Passivation
Oxide films
Metals
Water
Oxygen vacancies
Water treatment
Irradiation
Temperature
Oxygen
Amorphous semiconductors
Hydroxyl Radical
Adsorption
Thin films
Defects
Molecules

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Heo, Jae Sang ; Jo, Jeong Wan ; Kang, Jingu ; Jeong, Chan Yong ; Jeong, Hu Young ; Kim, Sung Kyu ; Kim, Kwanpyo ; Kwon, Hyuck In ; Kim, Jaekyun ; Kim, Yong Hoon ; Kim, Myung Gil ; Park, Sung Kyu. / Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors. In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 16. pp. 10403-10412.
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abstract = "The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 109, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm2 V-1 s-1, and a bias stability of ΔVTH < 2.5 V), which show more than a 30{\%} improvement over the simple DUV-treated a-IGZO TFTs.",
author = "Heo, {Jae Sang} and Jo, {Jeong Wan} and Jingu Kang and Jeong, {Chan Yong} and Jeong, {Hu Young} and Kim, {Sung Kyu} and Kwanpyo Kim and Kwon, {Hyuck In} and Jaekyun Kim and Kim, {Yong Hoon} and Kim, {Myung Gil} and Park, {Sung Kyu}",
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Heo, JS, Jo, JW, Kang, J, Jeong, CY, Jeong, HY, Kim, SK, Kim, K, Kwon, HI, Kim, J, Kim, YH, Kim, MG & Park, SK 2016, 'Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors', ACS Applied Materials and Interfaces, vol. 8, no. 16, pp. 10403-10412. https://doi.org/10.1021/acsami.5b12819

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors. / Heo, Jae Sang; Jo, Jeong Wan; Kang, Jingu; Jeong, Chan Yong; Jeong, Hu Young; Kim, Sung Kyu; Kim, Kwanpyo; Kwon, Hyuck In; Kim, Jaekyun; Kim, Yong Hoon; Kim, Myung Gil; Park, Sung Kyu.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 16, 27.04.2016, p. 10403-10412.

Research output: Contribution to journalArticle

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T1 - Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

AU - Heo, Jae Sang

AU - Jo, Jeong Wan

AU - Kang, Jingu

AU - Jeong, Chan Yong

AU - Jeong, Hu Young

AU - Kim, Sung Kyu

AU - Kim, Kwanpyo

AU - Kwon, Hyuck In

AU - Kim, Jaekyun

AU - Kim, Yong Hoon

AU - Kim, Myung Gil

AU - Park, Sung Kyu

PY - 2016/4/27

Y1 - 2016/4/27

N2 - The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 109, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm2 V-1 s-1, and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.

AB - The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 109, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm2 V-1 s-1, and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.

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