A novel structure that comprises semiconductor optical amplifier and laterally coupled cavity semiconductor laser is presented. The device does not need MZI configurations so that it permits large tolerance to input-power range.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|Publication status||Published - 2000 Dec 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering