Abstract
A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.
| Original language | English |
|---|---|
| Pages (from-to) | L574-L576 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 41 |
| Issue number | 5 B |
| Publication status | Published - 2002 May 15 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode. / Kim, Dae Sin; Lee, Seok; Kim, Jae Hun; Woo, Deok Ha; Kim, Sun Ho; Han, Sang Kook.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 5 B, 15.05.2002, p. L574-L576.Research output: Contribution to journal › Article
TY - JOUR
T1 - Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode
AU - Kim, Dae Sin
AU - Lee, Seok
AU - Kim, Jae Hun
AU - Woo, Deok Ha
AU - Kim, Sun Ho
AU - Han, Sang Kook
PY - 2002/5/15
Y1 - 2002/5/15
N2 - A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.
AB - A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.
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UR - http://www.scopus.com/inward/citedby.url?scp=0037095549&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0037095549
VL - 41
SP - L574-L576
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
SN - 0021-4922
IS - 5 B
ER -