Abstract
A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.
| Original language | English |
|---|---|
| Pages (from-to) | L574-L576 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 41 |
| Issue number | 5 B |
| DOIs | |
| Publication status | Published - 2002 May 15 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Kim, D. S., Lee, S., Kim, J. H., Woo, D. H., Kim, S. H., & Han, S. K. (2002). Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode. Japanese Journal of Applied Physics, Part 2: Letters, 41(5 B), L574-L576. https://doi.org/10.1143/jjap.41.l574