Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode

Dae Sin Kim, Seok Lee, Jae Hun Kim, Deok Ha Woo, Sun Ho Kim, Sang Kook Han

Research output: Contribution to journalArticle

Abstract

A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.

Original languageEnglish
Pages (from-to)L574-L576
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number5 B
Publication statusPublished - 2002 May 15

Fingerprint

Semiconductor optical amplifiers
light amplifiers
Semiconductor lasers
semiconductor lasers
retarding
Wavelength
Laser tuning
Transfer matrix method
tunable lasers
wavelengths
matrix methods
coupled modes
lasers
Tuning
selectivity
tuning
Electrodes
electrodes
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Kim, Dae Sin ; Lee, Seok ; Kim, Jae Hun ; Woo, Deok Ha ; Kim, Sun Ho ; Han, Sang Kook. / Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode. In: Japanese Journal of Applied Physics, Part 2: Letters. 2002 ; Vol. 41, No. 5 B. pp. L574-L576.
@article{3bd2231f371a4e8992ee740c5dca3713,
title = "Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode",
abstract = "A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.",
author = "Kim, {Dae Sin} and Seok Lee and Kim, {Jae Hun} and Woo, {Deok Ha} and Kim, {Sun Ho} and Han, {Sang Kook}",
year = "2002",
month = "5",
day = "15",
language = "English",
volume = "41",
pages = "L574--L576",
journal = "Japanese Journal of Applied Physics, Part 2: Letters",
issn = "0021-4922",
number = "5 B",

}

Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode. / Kim, Dae Sin; Lee, Seok; Kim, Jae Hun; Woo, Deok Ha; Kim, Sun Ho; Han, Sang Kook.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 5 B, 15.05.2002, p. L574-L576.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Wavelength tunability of laterally coupled semiconductor optical amplifier and semiconductor laser diode

AU - Kim, Dae Sin

AU - Lee, Seok

AU - Kim, Jae Hun

AU - Woo, Deok Ha

AU - Kim, Sun Ho

AU - Han, Sang Kook

PY - 2002/5/15

Y1 - 2002/5/15

N2 - A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.

AB - A novel tunable laser consisting of a laterally coupled semiconductor optical amplifier and a semiconductor laser is proposed. This structure exhibits a high degree of frequency selectivity, wide tunability with electrically controlled wavelength, and relatively high side-mode suppression achieved by the additional short electrode in the semiconductor laser. The proposed structure is simulated using the coupled mode theory and the modified transfer matrix method (TMM). This simulation yields a tuning range of up to 48 nm with a side-mode suppression ratio of approximately 35 dB.

UR - http://www.scopus.com/inward/record.url?scp=0037095549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037095549&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037095549

VL - 41

SP - L574-L576

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 5 B

ER -