Wear-leveling scheduler for phase-change RAM main memory for mobile consumer electronics

Sang Hoon Park, Hyeokjun Seo, Taehee You, Jin Young Kim, Eui Young Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Main memory systems based on phase-change random access memory (PRAM) have been actively researched due to low static power consumption, which is adequate to mobile consumer electronics. However, PRAMs require wear-leveling, which incur performance overhead, to compensate their limited life-time. Even though many works have discussed the overhead in terms of write latency, read latency is also affected and the degradation is even severer since PRAM read is faster than write. Consequently, this paper proposes a wear-leveling scheduler that reduces the effect of wear-leveling overhead on read latency. The proposed method which can cooperate with various wear-leveling algorithms enables wear-leveling only when no read request is issued for a period longer than the pre-defined threshold. In spite of simplicity, a PRAM-based memory system equipped with the proposed method achieves 50% shorter read latency without affecting wear-leveling performance.

Original languageEnglish
Title of host publicationISCE 2014 - 18th IEEE International Symposium on Consumer Electronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479945924
DOIs
Publication statusPublished - 2014 Jan 1
Event18th IEEE International Symposium on Consumer Electronics, ISCE 2014 - Jeju, Korea, Republic of
Duration: 2014 Jun 222014 Jun 25

Publication series

NameProceedings of the International Symposium on Consumer Electronics, ISCE

Other

Other18th IEEE International Symposium on Consumer Electronics, ISCE 2014
CountryKorea, Republic of
CityJeju
Period14/6/2214/6/25

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Park, S. H., Seo, H., You, T., Kim, J. Y., & Chung, E. Y. (2014). Wear-leveling scheduler for phase-change RAM main memory for mobile consumer electronics. In ISCE 2014 - 18th IEEE International Symposium on Consumer Electronics [6884311] (Proceedings of the International Symposium on Consumer Electronics, ISCE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCE.2014.6884311