Wet oxidation behaviors of polycrystalline [formula omitted] films

S. K. Kang, Dae Hong Ko, K. C. Lee, T. W. Lee, Y. H. Lee, T. H. Ahn, I. S. Yeo, S. H. oh, C. G. Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigated the oxidation behaviors of poly [formula omitted] films with a 15% and 42% Ge content. The films were deposited using ultrahigh vacuum chemical vapor deposition on a 1000 Å thick thermal [formula omitted] layer, and were oxidized using a conventional furnace in wet oxygen ambient at 700 and 800 °C. The physical and chemical properties of the oxide were analyzed by using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy before and after the oxidation. We observed that the Ge content in the oxide layer and oxidation rate increased with the increase of Ge content in poly [formula omitted] films. We also observed that Ge content in the oxide layer decreased with the increase of oxidation temperature.

Original languageEnglish
Pages (from-to)1617-1622
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume19
Issue number4
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

Oxides
Oxidation
oxidation
oxides
Rutherford backscattering spectroscopy
Ultrahigh vacuum
Photoelectron spectroscopy
High resolution transmission electron microscopy
chemical properties
Chemical properties
Spectrometry
x ray spectroscopy
ultrahigh vacuum
furnaces
Chemical vapor deposition
backscattering
Furnaces
Physical properties
physical properties
photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Kang, S. K. ; Ko, Dae Hong ; Lee, K. C. ; Lee, T. W. ; Lee, Y. H. ; Ahn, T. H. ; Yeo, I. S. ; oh, S. H. ; Park, C. G. / Wet oxidation behaviors of polycrystalline [formula omitted] films. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2001 ; Vol. 19, No. 4. pp. 1617-1622.
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author = "Kang, {S. K.} and Ko, {Dae Hong} and Lee, {K. C.} and Lee, {T. W.} and Lee, {Y. H.} and Ahn, {T. H.} and Yeo, {I. S.} and oh, {S. H.} and Park, {C. G.}",
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Wet oxidation behaviors of polycrystalline [formula omitted] films. / Kang, S. K.; Ko, Dae Hong; Lee, K. C.; Lee, T. W.; Lee, Y. H.; Ahn, T. H.; Yeo, I. S.; oh, S. H.; Park, C. G.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 19, No. 4, 01.01.2001, p. 1617-1622.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Wet oxidation behaviors of polycrystalline [formula omitted] films

AU - Kang, S. K.

AU - Ko, Dae Hong

AU - Lee, K. C.

AU - Lee, T. W.

AU - Lee, Y. H.

AU - Ahn, T. H.

AU - Yeo, I. S.

AU - oh, S. H.

AU - Park, C. G.

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N2 - We investigated the oxidation behaviors of poly [formula omitted] films with a 15% and 42% Ge content. The films were deposited using ultrahigh vacuum chemical vapor deposition on a 1000 Å thick thermal [formula omitted] layer, and were oxidized using a conventional furnace in wet oxygen ambient at 700 and 800 °C. The physical and chemical properties of the oxide were analyzed by using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy before and after the oxidation. We observed that the Ge content in the oxide layer and oxidation rate increased with the increase of Ge content in poly [formula omitted] films. We also observed that Ge content in the oxide layer decreased with the increase of oxidation temperature.

AB - We investigated the oxidation behaviors of poly [formula omitted] films with a 15% and 42% Ge content. The films were deposited using ultrahigh vacuum chemical vapor deposition on a 1000 Å thick thermal [formula omitted] layer, and were oxidized using a conventional furnace in wet oxygen ambient at 700 and 800 °C. The physical and chemical properties of the oxide were analyzed by using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy before and after the oxidation. We observed that the Ge content in the oxide layer and oxidation rate increased with the increase of Ge content in poly [formula omitted] films. We also observed that Ge content in the oxide layer decreased with the increase of oxidation temperature.

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