Wet oxidation behaviors of polycrystalline [formula omitted] films

S. K. Kang, D. H. ko, K. C. Lee, T. W. Lee, Y. H. Lee, T. H. Ahn, I. S. Yeo, S. H. oh, C. G. Park

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Abstract

We investigated the oxidation behaviors of poly [formula omitted] films with a 15% and 42% Ge content. The films were deposited using ultrahigh vacuum chemical vapor deposition on a 1000 Å thick thermal [formula omitted] layer, and were oxidized using a conventional furnace in wet oxygen ambient at 700 and 800 °C. The physical and chemical properties of the oxide were analyzed by using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy before and after the oxidation. We observed that the Ge content in the oxide layer and oxidation rate increased with the increase of Ge content in poly [formula omitted] films. We also observed that Ge content in the oxide layer decreased with the increase of oxidation temperature.

Original languageEnglish
Pages (from-to)1617-1622
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume19
Issue number4
DOIs
Publication statusPublished - 2001 Jul

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Kang, S. K., ko, D. H., Lee, K. C., Lee, T. W., Lee, Y. H., Ahn, T. H., Yeo, I. S., oh, S. H., & Park, C. G. (2001). Wet oxidation behaviors of polycrystalline [formula omitted] films. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 19(4), 1617-1622. https://doi.org/10.1116/1.1339022