Wide bandgap semiconductor electronic devices for high frequency applications

R. J. Trew, M. W. Shin, V. Gatto

Research output: Contribution to conferencePaper

12 Citations (Scopus)

Abstract

The microwave performance of electronic devices fabricated from SiC and GaN is described. The investigation makes use of theoretical simulations and the results are compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from SiC and GaN based semiconductors offer superior RF power performance, particularly at elevated temperature compared to comparable components fabricated from GaAs MESFET's. In particular, room temperature RF output power on the order of 4 W/mm with power-added efficiency approaching the ideal values for class A and B operation is available. These devices are likely to find application in power amplifiers for base station transmitters for cellular telephone systems, power modules for phased-array radars, and other applications. The devices are particularly attractive for applications that require operation at elevated temperature.

Original languageEnglish
Pages6-9
Number of pages4
Publication statusPublished - 1996 Dec 1
EventProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
Duration: 1996 Nov 31996 Nov 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CityOrlando, FL, USA
Period96/11/396/11/6

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Trew, R. J., Shin, M. W., & Gatto, V. (1996). Wide bandgap semiconductor electronic devices for high frequency applications. 6-9. Paper presented at Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, .