Abstract
The microwave performance of electronic devices fabricated from SiC and GaN is described. The investigation makes use of theoretical simulations and the results are compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from SiC and GaN based semiconductors offer superior RF power performance, particularly at elevated temperature compared to comparable components fabricated from GaAs MESFET's. In particular, room temperature RF output power on the order of 4 W/mm with power-added efficiency approaching the ideal values for class A and B operation is available. These devices are likely to find application in power amplifiers for base station transmitters for cellular telephone systems, power modules for phased-array radars, and other applications. The devices are particularly attractive for applications that require operation at elevated temperature.
| Original language | English |
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| Pages | 6-9 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA Duration: 1996 Nov 3 → 1996 Nov 6 |
Other
| Other | Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium |
|---|---|
| City | Orlando, FL, USA |
| Period | 96/11/3 → 96/11/6 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering