Abstract
Electronic and optical devices fabricated from wide bandgap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. In particular, MESFET's fabricated from wide bandgap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. The microwave performance of MESFET's fabricated from SiC and GaN was investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data was obtained. It was demonstrated the microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperature, compared to comparable components fabricated from GaAs MESFET's.
| Original language | English |
|---|---|
| Pages (from-to) | 109-123 |
| Number of pages | 15 |
| Journal | International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits |
| Publication status | Published - 1994 Dec 1 |
| Event | Proceedings of the 3rd International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits - Duisburg, Ger Duration: 1994 Oct 5 → 1994 Oct 7 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering