Wide bandgap semiconductor MESFETs for high temperature applications

R. J. Trew, M. W. Shin

Research output: Contribution to journal › Conference article

13 Citations (Scopus)

Abstract

Electronic and optical devices fabricated from wide bandgap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. In particular, MESFET's fabricated from wide bandgap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. The microwave performance of MESFET's fabricated from SiC and GaN was investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data was obtained. It was demonstrated the microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperature, compared to comparable components fabricated from GaAs MESFET's.

Original languageEnglish
Pages (from-to)109-123
Number of pages15
JournalInternational Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits
Publication statusPublished - 1994 Dec 1

Fingerprint

High temperature applications
Microwave amplifiers
Energy gap
Semiconductor materials
Power amplifiers
Optical devices
Simulators
Microwaves
Radiation
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Trew, R. J. ; Shin, M. W. / Wide bandgap semiconductor MESFETs for high temperature applications. In: International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits. 1994 ; pp. 109-123.
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Trew, RJ & Shin, MW 1994, 'Wide bandgap semiconductor MESFETs for high temperature applications', International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, pp. 109-123.

Wide bandgap semiconductor MESFETs for high temperature applications. / Trew, R. J.; Shin, M. W.

In: International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 01.12.1994, p. 109-123.

Research output: Contribution to journal › Conference article

TY - JOUR

T1 - Wide bandgap semiconductor MESFETs for high temperature applications

AU - Trew, R. J.

AU - Shin, M. W.

PY - 1994/12/1

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N2 - Electronic and optical devices fabricated from wide bandgap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. In particular, MESFET's fabricated from wide bandgap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. The microwave performance of MESFET's fabricated from SiC and GaN was investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data was obtained. It was demonstrated the microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperature, compared to comparable components fabricated from GaAs MESFET's.

AB - Electronic and optical devices fabricated from wide bandgap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. In particular, MESFET's fabricated from wide bandgap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. The microwave performance of MESFET's fabricated from SiC and GaN was investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data was obtained. It was demonstrated the microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperature, compared to comparable components fabricated from GaAs MESFET's.

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Trew RJ, Shin MW. Wide bandgap semiconductor MESFETs for high temperature applications. International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits. 1994 Dec 1;109-123.

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