Wide dynamic range CMOS active pixel sensor with sensitivity control gate

Eunsoo Chang, Youngcheol Chae, Jimin Cheon, Gunhee Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper proposes a wide dynamic range CMOS APS pixel array using a sensitivity control gate (SCG) without much degradation in optical performance. The proposed method is realized by adding a polysilicon control gate over the photodiode (PD) area, which adds MOS capacitance to the original PD capacitance. While a single control gate over PD can maximize the range of capacitance PD can have, it also has the maximum light absorption in the gate. By using SCG with holes, fringing capacitance of the control gate can be utilized to effectively sustain the total capacitance range while increasing the QE.

Original languageEnglish
Title of host publicationCAS 2009 Proceedings - 2009 International Semiconductor Conference
Pages289-292
Number of pages4
DOIs
Publication statusPublished - 2009
Event2009 International Semiconductor Conference, CAS 2009 - Sinaia, Romania
Duration: 2009 Oct 122009 Oct 14

Publication series

NameProceedings of the International Semiconductor Conference, CAS
Volume1

Conference

Conference2009 International Semiconductor Conference, CAS 2009
CountryRomania
CitySinaia
Period09/10/1209/10/14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Chang, E., Chae, Y., Cheon, J., & Han, G. (2009). Wide dynamic range CMOS active pixel sensor with sensitivity control gate. In CAS 2009 Proceedings - 2009 International Semiconductor Conference (pp. 289-292). [5336542] (Proceedings of the International Semiconductor Conference, CAS; Vol. 1). https://doi.org/10.1109/SMICND.2009.5336542