Wide dynamic range CMOS active pixel sensor with sensitivity control gate

Eunsoo Chang; Youngcheol Chae; Jimin Cheon; Gunhee Han

doi:10.1109/SMICND.2009.5336542

Wide dynamic range CMOS active pixel sensor with sensitivity control gate

Eunsoo Chang, Youngcheol Chae, Jimin Cheon, Gunhee Han

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper proposes a wide dynamic range CMOS APS pixel array using a sensitivity control gate (SCG) without much degradation in optical performance. The proposed method is realized by adding a polysilicon control gate over the photodiode (PD) area, which adds MOS capacitance to the original PD capacitance. While a single control gate over PD can maximize the range of capacitance PD can have, it also has the maximum light absorption in the gate. By using SCG with holes, fringing capacitance of the control gate can be utilized to effectively sustain the total capacitance range while increasing the QE.

Original language	English
Title of host publication	CAS 2009 Proceedings - 2009 International Semiconductor Conference
Pages	289-292
Number of pages	4
DOIs	https://doi.org/10.1109/SMICND.2009.5336542
Publication status	Published - 2009
Event	2009 International Semiconductor Conference, CAS 2009 - Sinaia, Romania Duration: 2009 Oct 12 → 2009 Oct 14

Publication series

Name	Proceedings of the International Semiconductor Conference, CAS
Volume	1

Conference

Conference	2009 International Semiconductor Conference, CAS 2009
Country/Territory	Romania
City	Sinaia
Period	09/10/12 → 09/10/14

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/SMICND.2009.5336542

Cite this

@inproceedings{67e06e14dd4b4014be60f662f294aa65,

title = "Wide dynamic range CMOS active pixel sensor with sensitivity control gate",

abstract = "This paper proposes a wide dynamic range CMOS APS pixel array using a sensitivity control gate (SCG) without much degradation in optical performance. The proposed method is realized by adding a polysilicon control gate over the photodiode (PD) area, which adds MOS capacitance to the original PD capacitance. While a single control gate over PD can maximize the range of capacitance PD can have, it also has the maximum light absorption in the gate. By using SCG with holes, fringing capacitance of the control gate can be utilized to effectively sustain the total capacitance range while increasing the QE.",

author = "Eunsoo Chang and Youngcheol Chae and Jimin Cheon and Gunhee Han",

year = "2009",

doi = "10.1109/SMICND.2009.5336542",

language = "English",

isbn = "9781424444137",

series = "Proceedings of the International Semiconductor Conference, CAS",

pages = "289--292",

booktitle = "CAS 2009 Proceedings - 2009 International Semiconductor Conference",

note = "2009 International Semiconductor Conference, CAS 2009 ; Conference date: 12-10-2009 Through 14-10-2009",

}

Chang, E, Chae, Y, Cheon, J & Han, G 2009, Wide dynamic range CMOS active pixel sensor with sensitivity control gate. in CAS 2009 Proceedings - 2009 International Semiconductor Conference., 5336542, Proceedings of the International Semiconductor Conference, CAS, vol. 1, pp. 289-292, 2009 International Semiconductor Conference, CAS 2009, Sinaia, Romania, 09/10/12. https://doi.org/10.1109/SMICND.2009.5336542

Wide dynamic range CMOS active pixel sensor with sensitivity control gate. / Chang, Eunsoo; Chae, Youngcheol; Cheon, Jimin et al.

CAS 2009 Proceedings - 2009 International Semiconductor Conference. 2009. p. 289-292 5336542 (Proceedings of the International Semiconductor Conference, CAS; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Wide dynamic range CMOS active pixel sensor with sensitivity control gate

AU - Chang, Eunsoo

AU - Chae, Youngcheol

AU - Cheon, Jimin

AU - Han, Gunhee

PY - 2009

Y1 - 2009

N2 - This paper proposes a wide dynamic range CMOS APS pixel array using a sensitivity control gate (SCG) without much degradation in optical performance. The proposed method is realized by adding a polysilicon control gate over the photodiode (PD) area, which adds MOS capacitance to the original PD capacitance. While a single control gate over PD can maximize the range of capacitance PD can have, it also has the maximum light absorption in the gate. By using SCG with holes, fringing capacitance of the control gate can be utilized to effectively sustain the total capacitance range while increasing the QE.

AB - This paper proposes a wide dynamic range CMOS APS pixel array using a sensitivity control gate (SCG) without much degradation in optical performance. The proposed method is realized by adding a polysilicon control gate over the photodiode (PD) area, which adds MOS capacitance to the original PD capacitance. While a single control gate over PD can maximize the range of capacitance PD can have, it also has the maximum light absorption in the gate. By using SCG with holes, fringing capacitance of the control gate can be utilized to effectively sustain the total capacitance range while increasing the QE.

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T3 - Proceedings of the International Semiconductor Conference, CAS

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BT - CAS 2009 Proceedings - 2009 International Semiconductor Conference

T2 - 2009 International Semiconductor Conference, CAS 2009

Y2 - 12 October 2009 through 14 October 2009

ER -

Wide dynamic range CMOS active pixel sensor with sensitivity control gate

Abstract

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Conference

All Science Journal Classification (ASJC) codes

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