Wideband Si micromachined transitions for RF wafer-scale packages

Alexandras Margomenos, Yongshik Lee, Linda P.B. Katehi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and a FGC-to-FGC transitions are presented.

Original languageEnglish
Title of host publication2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages183-186
Number of pages4
DOIs
Publication statusPublished - 2007 Aug 2
Event2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States
Duration: 2007 Jan 102007 Jan 12

Other

Other2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
CountryUnited States
CityLong Beach, CA
Period07/1/1007/1/12

Fingerprint

Antenna grounds
Coplanar waveguides
Packaging
Silicon wafers
Encapsulation
Fabrication

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Margomenos, A., Lee, Y., & Katehi, L. P. B. (2007). Wideband Si micromachined transitions for RF wafer-scale packages. In 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 (pp. 183-186). [4117357] https://doi.org/10.1109/SMIC.2007.322790
Margomenos, Alexandras ; Lee, Yongshik ; Katehi, Linda P.B. / Wideband Si micromachined transitions for RF wafer-scale packages. 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07. 2007. pp. 183-186
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Margomenos, A, Lee, Y & Katehi, LPB 2007, Wideband Si micromachined transitions for RF wafer-scale packages. in 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07., 4117357, pp. 183-186, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07, Long Beach, CA, United States, 07/1/10. https://doi.org/10.1109/SMIC.2007.322790

Wideband Si micromachined transitions for RF wafer-scale packages. / Margomenos, Alexandras; Lee, Yongshik; Katehi, Linda P.B.

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07. 2007. p. 183-186 4117357.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and a FGC-to-FGC transitions are presented.

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Margomenos A, Lee Y, Katehi LPB. Wideband Si micromachined transitions for RF wafer-scale packages. In 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07. 2007. p. 183-186. 4117357 https://doi.org/10.1109/SMIC.2007.322790