Wideband Si micromachined transitions for RF wafer-scale packages

Alexandras Margomenos, Yongshik Lee, Linda P.B. Katehi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and a FGC-to-FGC transitions are presented.

Original languageEnglish
Title of host publication2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages183-186
Number of pages4
DOIs
Publication statusPublished - 2007 Aug 2
Event2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States
Duration: 2007 Jan 102007 Jan 12

Other

Other2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
CountryUnited States
CityLong Beach, CA
Period07/1/1007/1/12

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Margomenos, A., Lee, Y., & Katehi, L. P. B. (2007). Wideband Si micromachined transitions for RF wafer-scale packages. In 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 (pp. 183-186). [4117357] https://doi.org/10.1109/SMIC.2007.322790