Widening the Wavelength Absorption Range of Indium Gallium Zinc Oxide Phototransistors through the Capping layer

Kyungho Park; Hyukjoon Yoo; Dong Hyun Choi; Sujin Jung; Kyungmoon Kwak; Byung Ha Kang; Hyun Jae Kim

doi:10.1002/sdtp.15423

Widening the Wavelength Absorption Range of Indium Gallium Zinc Oxide Phototransistors through the Capping layer

Kyungho Park, Hyukjoon Yoo, Dong Hyun Choi, Sujin Jung, Kyungmoon Kwak, Byung Ha Kang, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We propose indium gallium zinc oxide (IGZO) phototransistors with an extended wavelength detection range by a capping layer composed of hafnium oxide (HfO2). A HfO2 capping layer enables the generation of oxygen vacancies by strongly attracting oxygen ions in the back channel of IGZO. IGZO phototransistors with the capping layer exhibit improved optoelectronic characteristics, such as photoresponsivity of149.48 A/W, photosensitivity of 1.17 x 106, detectivity of 3.64 x 1010 Jones under the green light (532 nm) illumination of 10 m W/mm2.

Original language	English
Pages (from-to)	86-89
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	53
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.15423
Publication status	Published - 2022
Event	59th International Symposium, Seminar and Exhibition, Display Week 2022 - San Jose, United States Duration: 2022 May 8 → 2022 May 13

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) (no.2020M3H4A1A02084896) and Samsung Display.

Publisher Copyright:
© 2022 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.15423

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title = "Widening the Wavelength Absorption Range of Indium Gallium Zinc Oxide Phototransistors through the Capping layer",

abstract = "We propose indium gallium zinc oxide (IGZO) phototransistors with an extended wavelength detection range by a capping layer composed of hafnium oxide (HfO2). A HfO2 capping layer enables the generation of oxygen vacancies by strongly attracting oxygen ions in the back channel of IGZO. IGZO phototransistors with the capping layer exhibit improved optoelectronic characteristics, such as photoresponsivity of149.48 A/W, photosensitivity of 1.17 x 106, detectivity of 3.64 x 1010 Jones under the green light (532 nm) illumination of 10 m W/mm2.",

author = "Kyungho Park and Hyukjoon Yoo and Choi, {Dong Hyun} and Sujin Jung and Kyungmoon Kwak and Kang, {Byung Ha} and Kim, {Hyun Jae}",

note = "Funding Information: This research was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) (no.2020M3H4A1A02084896) and Samsung Display. Publisher Copyright: {\textcopyright} 2022 SID.; 59th International Symposium, Seminar and Exhibition, Display Week 2022 ; Conference date: 08-05-2022 Through 13-05-2022",

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AU - Park, Kyungho

AU - Yoo, Hyukjoon

AU - Choi, Dong Hyun

AU - Jung, Sujin

AU - Kwak, Kyungmoon

AU - Kang, Byung Ha

AU - Kim, Hyun Jae

N1 - Funding Information: This research was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) (no.2020M3H4A1A02084896) and Samsung Display. Publisher Copyright: © 2022 SID.

PY - 2022

Y1 - 2022

N2 - We propose indium gallium zinc oxide (IGZO) phototransistors with an extended wavelength detection range by a capping layer composed of hafnium oxide (HfO2). A HfO2 capping layer enables the generation of oxygen vacancies by strongly attracting oxygen ions in the back channel of IGZO. IGZO phototransistors with the capping layer exhibit improved optoelectronic characteristics, such as photoresponsivity of149.48 A/W, photosensitivity of 1.17 x 106, detectivity of 3.64 x 1010 Jones under the green light (532 nm) illumination of 10 m W/mm2.

AB - We propose indium gallium zinc oxide (IGZO) phototransistors with an extended wavelength detection range by a capping layer composed of hafnium oxide (HfO2). A HfO2 capping layer enables the generation of oxygen vacancies by strongly attracting oxygen ions in the back channel of IGZO. IGZO phototransistors with the capping layer exhibit improved optoelectronic characteristics, such as photoresponsivity of149.48 A/W, photosensitivity of 1.17 x 106, detectivity of 3.64 x 1010 Jones under the green light (532 nm) illumination of 10 m W/mm2.

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Widening the Wavelength Absorption Range of Indium Gallium Zinc Oxide Phototransistors through the Capping layer

Abstract

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