We propose indium gallium zinc oxide (IGZO) phototransistors with an extended wavelength detection range by a capping layer composed of hafnium oxide (HfO2). A HfO2 capping layer enables the generation of oxygen vacancies by strongly attracting oxygen ions in the back channel of IGZO. IGZO phototransistors with the capping layer exhibit improved optoelectronic characteristics, such as photoresponsivity of149.48 A/W, photosensitivity of 1.17 x 106, detectivity of 3.64 x 1010 Jones under the green light (532 nm) illumination of 10 m W/mm2.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2022|
|Event||59th International Symposium, Seminar and Exhibition, Display Week 2022 - San Jose, United States|
Duration: 2022 May 8 → 2022 May 13
Bibliographical noteFunding Information:
This research was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) (no.2020M3H4A1A02084896) and Samsung Display.
© 2022 SID.
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