Width dependence of quantum lifetimes in GaAAs heterostructures

K. Yoo, J. Park, J. Choi

Research output: Contribution to journalArticlepeer-review


We have studied the channel width dependence of quantum lifetimes (Formula presented) (or equivalently the quantum mobilities (Formula presented)=e(Formula presented)/m*) for samples with the widths w of 2-50 μm fabricated from three GaAs/(Formula presented)(Formula presented)As wafers. (Formula presented)estimated from the amplitude of Shubnikov-de Haas oscillations is found not to be affected by the asymmetry of Shubnikov-de Haas peaks and the boundary scattering observed in narrow samples. However, the two- to one-dimensional crossover occurring at w<(Formula presented) (thermal diffusion length) leads to the reduction of (Formula presented). In addition, we have also carried out similar measurements with the sample illuminated with a red light-emitting diode. The results obtained from the illuminated samples confirm those from the unilluminated samples.

Original languageEnglish
Pages (from-to)16551-16554
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
Publication statusPublished - 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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