World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT

Je Hun Lee, Do Hyun Kim, Dong Ju Yang, Sun Young Hong, Kap Soo Yoon, Pil Soon Hong, Chang Oh Jeong, Hong Sik Park, Shi Yul Kim, Soon Kwon Lim, Sang Soo Kim, Kyoung Seok Son, Tae Sang Kim, Jang Yeon Kwon, Sang Yoon Lee

Research output: Contribution to journalConference articlepeer-review

219 Citations (Scopus)


The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, V th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce Vth variation.

Original languageEnglish
Pages (from-to)625-628
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Issue number1
Publication statusPublished - 2008
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: 2008 May 202008 May 21

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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