World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT

Je Hun Lee; Do Hyun Kim; Dong Ju Yang; Sun Young Hong; Kap Soo Yoon; Pil Soon Hong; Chang Oh Jeong; Hong Sik Park; Shi Yul Kim; Soon Kwon Lim; Sang Soo Kim; Kyoung Seok Son; Tae Sang Kim; Jang Yeon Kwon; Sang Yoon Lee

doi:10.1889/1.3069740

World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT

Je Hun Lee, Do Hyun Kim, Dong Ju Yang, Sun Young Hong, Kap Soo Yoon, Pil Soon Hong, Chang Oh Jeong, Hong Sik Park, Shi Yul Kim, Soon Kwon Lim, Sang Soo Kim, Kyoung Seok Son, Tae Sang Kim, Jang Yeon Kwon, Sang Yoon Lee

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

219 Citations (Scopus)

Abstract

The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm²/V-s, V _th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (V_th) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V _th positively and reduce V_th variation.

Original language	English
Pages (from-to)	625-628
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	1
DOIs	https://doi.org/10.1889/1.3069740
Publication status	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 2008 May 20 → 2008 May 21

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1889/1.3069740

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title = "World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT",

abstract = "The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, V th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce Vth variation.",

author = "Lee, {Je Hun} and Kim, {Do Hyun} and Yang, {Dong Ju} and Hong, {Sun Young} and Yoon, {Kap Soo} and Hong, {Pil Soon} and Jeong, {Chang Oh} and Park, {Hong Sik} and Kim, {Shi Yul} and Lim, {Soon Kwon} and Kim, {Sang Soo} and Son, {Kyoung Seok} and Kim, {Tae Sang} and Kwon, {Jang Yeon} and Lee, {Sang Yoon}",

year = "2008",

doi = "10.1889/1.3069740",

language = "English",

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pages = "625--628",

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AU - Lee, Je Hun

AU - Kim, Do Hyun

AU - Yang, Dong Ju

AU - Hong, Sun Young

AU - Yoon, Kap Soo

AU - Hong, Pil Soon

AU - Jeong, Chang Oh

AU - Park, Hong Sik

AU - Kim, Shi Yul

AU - Lim, Soon Kwon

AU - Kim, Sang Soo

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Kwon, Jang Yeon

AU - Lee, Sang Yoon

PY - 2008

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AB - The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, V th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce Vth variation.

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ER -

World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT

Abstract

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