World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT

Je Hun Lee, Do Hyun Kim, Dong Ju Yang, Sun Young Hong, Kap Soo Yoon, Pil Soon Hong, Chang Oh Jeong, Hong Sik Park, Shi Yul Kim, Soon Kwon Lim, Sang Soo Kim, Kyoung Seok Son, Tae Sang Kim, Jang Yeon Kwon, Sang Yoon Lee

Research output: Contribution to journalConference article

172 Citations (Scopus)

Abstract

The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, V th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce Vth variation.

Original languageEnglish
Pages (from-to)625-628
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume39
Issue number2
Publication statusPublished - 2008 Oct 30
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: 2008 May 202008 May 21

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Thin film transistors
Liquid crystal displays
Threshold voltage
Oxide films
Dry etching
Wet etching
Passivation
Molybdenum
Annealing
Glass

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, J. H., Kim, D. H., Yang, D. J., Hong, S. Y., Yoon, K. S., Hong, P. S., ... Lee, S. Y. (2008). World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT. Digest of Technical Papers - SID International Symposium, 39(2), 625-628.
Lee, Je Hun ; Kim, Do Hyun ; Yang, Dong Ju ; Hong, Sun Young ; Yoon, Kap Soo ; Hong, Pil Soon ; Jeong, Chang Oh ; Park, Hong Sik ; Kim, Shi Yul ; Lim, Soon Kwon ; Kim, Sang Soo ; Son, Kyoung Seok ; Kim, Tae Sang ; Kwon, Jang Yeon ; Lee, Sang Yoon. / World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT. In: Digest of Technical Papers - SID International Symposium. 2008 ; Vol. 39, No. 2. pp. 625-628.
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abstract = "The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, V th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce Vth variation.",
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Lee, JH, Kim, DH, Yang, DJ, Hong, SY, Yoon, KS, Hong, PS, Jeong, CO, Park, HS, Kim, SY, Lim, SK, Kim, SS, Son, KS, Kim, TS, Kwon, JY & Lee, SY 2008, 'World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT', Digest of Technical Papers - SID International Symposium, vol. 39, no. 2, pp. 625-628.

World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT. / Lee, Je Hun; Kim, Do Hyun; Yang, Dong Ju; Hong, Sun Young; Yoon, Kap Soo; Hong, Pil Soon; Jeong, Chang Oh; Park, Hong Sik; Kim, Shi Yul; Lim, Soon Kwon; Kim, Sang Soo; Son, Kyoung Seok; Kim, Tae Sang; Kwon, Jang Yeon; Lee, Sang Yoon.

In: Digest of Technical Papers - SID International Symposium, Vol. 39, No. 2, 30.10.2008, p. 625-628.

Research output: Contribution to journalConference article

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AU - Jeong, Chang Oh

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AU - Kim, Shi Yul

AU - Lim, Soon Kwon

AU - Kim, Sang Soo

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Kwon, Jang Yeon

AU - Lee, Sang Yoon

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N2 - The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, V th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce Vth variation.

AB - The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, V th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce Vth variation.

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Lee JH, Kim DH, Yang DJ, Hong SY, Yoon KS, Hong PS et al. World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT. Digest of Technical Papers - SID International Symposium. 2008 Oct 30;39(2):625-628.