The world's largest (15-inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, V th of-1.3±1.4V and sub-threshold swing (SS) of 0.96±0.10 V/dec. For a manufacturing-oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average V th positively and reduce Vth variation.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2008 Jan 1|
|Event||2008 SID International Symposium - Los Angeles, CA, United States|
Duration: 2008 May 20 → 2008 May 21
All Science Journal Classification (ASJC) codes