Wrinkling evolution of a growing bubble: The wonders of petal-like patterns in amorphous silicon membranes

Kayoung Lee, Sangwook Lee, Dahl-Young Khang, Taeyoon Lee

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A large-area amorphous silicon (a-Si) membrane on an oxidized wafer (SiO2/Si) is detached from the substrate by dissolving the sandwiched oxide layer using hydrofluoric acid solution (HF/H2O). Due to the atomic disorder in the structure of a-Si, the rate of molecular diffusion inside the a-Si film and etching of the oxide layer is not uniform over the film; thus, certain over-susceptible spots for etchant infiltration starts to locally detach. Using an in situ optical microscope, initially the detached region is observed to be buckled as a circular dome-shaped protuberance, which then forms wrinkles around the rim of the a-Si bubble. Around the rim, the deformation pattern was strongly dependant on the thickness h of the film, where the number of facets in the engendered petal-like patterns decreased with the increasing h. The tension-induced wrinkling in a-Si membranes was analytically and semi-quantitatively examined, and we conclude that the formation of peripheral corrugation is primarily due to the upward stretching force exerted by the underlying droplet composed of etchant and etching byproducts. The understanding of the elastic instability in ultrathin membranes could be extended to direct measurement of the fundamental properties in mechanically inferior systems.

Original languageEnglish
Pages (from-to)3249-3256
Number of pages8
JournalSoft Matter
Volume6
Issue number14
DOIs
Publication statusPublished - 2010 Jul 21

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petals
wrinkling
Amorphous silicon
amorphous silicon
bubbles
membranes
Membranes
etchants
rims
Oxides
Etching
etching
protuberances
Hydrofluoric Acid
molecular diffusion
oxides
hydrofluoric acid
Domes
infiltration
domes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics

Cite this

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abstract = "A large-area amorphous silicon (a-Si) membrane on an oxidized wafer (SiO2/Si) is detached from the substrate by dissolving the sandwiched oxide layer using hydrofluoric acid solution (HF/H2O). Due to the atomic disorder in the structure of a-Si, the rate of molecular diffusion inside the a-Si film and etching of the oxide layer is not uniform over the film; thus, certain over-susceptible spots for etchant infiltration starts to locally detach. Using an in situ optical microscope, initially the detached region is observed to be buckled as a circular dome-shaped protuberance, which then forms wrinkles around the rim of the a-Si bubble. Around the rim, the deformation pattern was strongly dependant on the thickness h of the film, where the number of facets in the engendered petal-like patterns decreased with the increasing h. The tension-induced wrinkling in a-Si membranes was analytically and semi-quantitatively examined, and we conclude that the formation of peripheral corrugation is primarily due to the upward stretching force exerted by the underlying droplet composed of etchant and etching byproducts. The understanding of the elastic instability in ultrathin membranes could be extended to direct measurement of the fundamental properties in mechanically inferior systems.",
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Wrinkling evolution of a growing bubble : The wonders of petal-like patterns in amorphous silicon membranes. / Lee, Kayoung; Lee, Sangwook; Khang, Dahl-Young; Lee, Taeyoon.

In: Soft Matter, Vol. 6, No. 14, 21.07.2010, p. 3249-3256.

Research output: Contribution to journalArticle

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