X-ray photoelectron spectroscopic analysis on plasma-etched SiO2 aerogel with CHF3 gas

Seok Joo Wang, Il Sup Jin, Hyung-Ho Park

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

SiO2 aerogel has great potential as a promising intermetal dielectric with low dielectric constant due to its porous nature. Dry etching of porous SiO2 should be carefully investigated for its application as an intermetal dielectric. The etching behaviour of SiO2 aerogel with inductively coupled CHF3 plasma etching was investigated and compared with thermally grown SiO2. A basic three-dimensional network structure, composed of SiO2 particles and internal pores, was maintained on the etching process. From angle-resolved X-ray photoelectron spectroscopy analyses, it was revealed that the etching process occurred not only at the aerogel film surface but also at the large internal surface. However, the effective etch rate was slower, from the consideration of 70% film porosity, compared with thermally grown SiO2. This is related to the large content of C and H in the SiO2 aerogel film.

Original languageEnglish
Pages (from-to)59-64
Number of pages6
JournalSurface and Coatings Technology
Volume100-101
Issue number1-3
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Spectroscopic analysis
Aerogels
aerogels
spectroscopic analysis
Photoelectrons
photoelectrons
Gases
etching
Plasmas
Etching
X rays
gases
x rays
porosity
Dry etching
Plasma etching
Inductively coupled plasma
plasma etching
Permittivity
X ray photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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abstract = "SiO2 aerogel has great potential as a promising intermetal dielectric with low dielectric constant due to its porous nature. Dry etching of porous SiO2 should be carefully investigated for its application as an intermetal dielectric. The etching behaviour of SiO2 aerogel with inductively coupled CHF3 plasma etching was investigated and compared with thermally grown SiO2. A basic three-dimensional network structure, composed of SiO2 particles and internal pores, was maintained on the etching process. From angle-resolved X-ray photoelectron spectroscopy analyses, it was revealed that the etching process occurred not only at the aerogel film surface but also at the large internal surface. However, the effective etch rate was slower, from the consideration of 70{\%} film porosity, compared with thermally grown SiO2. This is related to the large content of C and H in the SiO2 aerogel film.",
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X-ray photoelectron spectroscopic analysis on plasma-etched SiO2 aerogel with CHF3 gas. / Wang, Seok Joo; Jin, Il Sup; Park, Hyung-Ho.

In: Surface and Coatings Technology, Vol. 100-101, No. 1-3, 01.01.1998, p. 59-64.

Research output: Contribution to journalArticle

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