X-ray photoelectron spectroscopic study of Ge2 Sb2 Te5 etched by fluorocarbon inductively coupled plasmas

S. K. Kang; J. S. Oh; B. J. Park; S. W. Kim; J. T. Lim; G. Y. Yeom; C. J. Kang; G. J. Min

doi:10.1063/1.2967468

X-ray photoelectron spectroscopic study of Ge2 Sb2 Te5 etched by fluorocarbon inductively coupled plasmas

S. K. Kang, J. S. Oh, B. J. Park, S. W. Kim, J. T. Lim, G. Y. Yeom, C. J. Kang, G. J. Min

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

X-ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge2 Sb2 Te5 (GST) etched by fluorocarbon gases at different F/C ratios. When blank GST was etched, the gas with a higher F/C ratio produced a thinner C-F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C-F layer.

Original language	English
Article number	043126
Journal	Applied Physics Letters
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.2967468
Publication status	Published - 2008

Bibliographical note

Funding Information:
This study was supported by Samsung Electronics and the National Program for Tera-Level Nanodevices of the Korean Ministry of Education, Science and Technology (MEST) as a Century Frontier Program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2967468

Cite this

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title = "X-ray photoelectron spectroscopic study of Ge2 Sb2 Te5 etched by fluorocarbon inductively coupled plasmas",

abstract = "X-ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge2 Sb2 Te5 (GST) etched by fluorocarbon gases at different F/C ratios. When blank GST was etched, the gas with a higher F/C ratio produced a thinner C-F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C-F layer.",

author = "Kang, {S. K.} and Oh, {J. S.} and Park, {B. J.} and Kim, {S. W.} and Lim, {J. T.} and Yeom, {G. Y.} and Kang, {C. J.} and Min, {G. J.}",

note = "Funding Information: This study was supported by Samsung Electronics and the National Program for Tera-Level Nanodevices of the Korean Ministry of Education, Science and Technology (MEST) as a Century Frontier Program.",

year = "2008",

doi = "10.1063/1.2967468",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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T1 - X-ray photoelectron spectroscopic study of Ge2 Sb2 Te5 etched by fluorocarbon inductively coupled plasmas

AU - Kang, S. K.

AU - Oh, J. S.

AU - Park, B. J.

AU - Kim, S. W.

AU - Lim, J. T.

AU - Yeom, G. Y.

AU - Kang, C. J.

AU - Min, G. J.

N1 - Funding Information: This study was supported by Samsung Electronics and the National Program for Tera-Level Nanodevices of the Korean Ministry of Education, Science and Technology (MEST) as a Century Frontier Program.

PY - 2008

Y1 - 2008

N2 - X-ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge2 Sb2 Te5 (GST) etched by fluorocarbon gases at different F/C ratios. When blank GST was etched, the gas with a higher F/C ratio produced a thinner C-F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C-F layer.

AB - X-ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge2 Sb2 Te5 (GST) etched by fluorocarbon gases at different F/C ratios. When blank GST was etched, the gas with a higher F/C ratio produced a thinner C-F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C-F layer.

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X-ray photoelectron spectroscopic study of Ge2 Sb2 Te5 etched by fluorocarbon inductively coupled plasmas

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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