X-ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge2 Sb2 Te5 (GST) etched by fluorocarbon gases at different F/C ratios. When blank GST was etched, the gas with a higher F/C ratio produced a thinner C-F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C-F layer.
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|
Bibliographical noteFunding Information:
This study was supported by Samsung Electronics and the National Program for Tera-Level Nanodevices of the Korean Ministry of Education, Science and Technology (MEST) as a Century Frontier Program.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)