YSi 2-x formation in the presence of interfacial SiO 2 layer

M. H. Cho, D. H. Ko, Y. G. Choi, I. W. Lyo, K. Jeong, C. N. Whang

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Abstract

YSi 2-x films were grown by ion-assisted evaporation in an ultrahigh vacuum (UHV) on Si(111) through a thin SiO 2 layer. The films grown on the oxidized Si were changed from a polycrystalline structure with various phases of oxides and silicides into a single-crystalline silicide structure as the annealing temperature was increased in the UHV chamber. The structural change with the annealing temperature implied that various Y 2O 3 phases formed by the reaction between Y and SiO 2 were decomposed and transformed into YSi 2-x under the UHV environment. Rutherford backscattering spectroscopy/channeling showed that, although the interfacial crystallinity of the film grown on the SiO 2 layer was poorer quality than the film grown on a clean Si surface, a single crystalline YSi 2-x layer with high crystallinity (χ min=8%) was grown. These results showed that the difference of the thermal energy and the formation energy between the oxides of Y 2O 3-SiO 2 and yttrium silicide determined the evolution of the silicide layer formation and its crystal structure.

Original languageEnglish
Pages (from-to)5555-5559
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number9
DOIs
Publication statusPublished - 2002 Nov 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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