YSi 2-x formation in the presence of interfacial SiO 2 layer

Mann-Ho Cho, Dae Hong Ko, Y. G. Choi, I. W. Lyo, KwangHo Jeong, C. N. Whang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

YSi 2-x films were grown by ion-assisted evaporation in an ultrahigh vacuum (UHV) on Si(111) through a thin SiO 2 layer. The films grown on the oxidized Si were changed from a polycrystalline structure with various phases of oxides and silicides into a single-crystalline silicide structure as the annealing temperature was increased in the UHV chamber. The structural change with the annealing temperature implied that various Y 2O 3 phases formed by the reaction between Y and SiO 2 were decomposed and transformed into YSi 2-x under the UHV environment. Rutherford backscattering spectroscopy/channeling showed that, although the interfacial crystallinity of the film grown on the SiO 2 layer was poorer quality than the film grown on a clean Si surface, a single crystalline YSi 2-x layer with high crystallinity (χ min=8%) was grown. These results showed that the difference of the thermal energy and the formation energy between the oxides of Y 2O 3-SiO 2 and yttrium silicide determined the evolution of the silicide layer formation and its crystal structure.

Original languageEnglish
Pages (from-to)5555-5559
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number9
DOIs
Publication statusPublished - 2002 Nov 1

Fingerprint

ultrahigh vacuum
crystallinity
annealing
oxides
silicides
energy of formation
vacuum chambers
yttrium
thermal energy
backscattering
evaporation
crystal structure
temperature
spectroscopy
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Cho, Mann-Ho ; Ko, Dae Hong ; Choi, Y. G. ; Lyo, I. W. ; Jeong, KwangHo ; Whang, C. N. / YSi 2-x formation in the presence of interfacial SiO 2 layer. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 9. pp. 5555-5559.
@article{a7dd14838ee64d8e97cbb4d030555684,
title = "YSi 2-x formation in the presence of interfacial SiO 2 layer",
abstract = "YSi 2-x films were grown by ion-assisted evaporation in an ultrahigh vacuum (UHV) on Si(111) through a thin SiO 2 layer. The films grown on the oxidized Si were changed from a polycrystalline structure with various phases of oxides and silicides into a single-crystalline silicide structure as the annealing temperature was increased in the UHV chamber. The structural change with the annealing temperature implied that various Y 2O 3 phases formed by the reaction between Y and SiO 2 were decomposed and transformed into YSi 2-x under the UHV environment. Rutherford backscattering spectroscopy/channeling showed that, although the interfacial crystallinity of the film grown on the SiO 2 layer was poorer quality than the film grown on a clean Si surface, a single crystalline YSi 2-x layer with high crystallinity (χ min=8{\%}) was grown. These results showed that the difference of the thermal energy and the formation energy between the oxides of Y 2O 3-SiO 2 and yttrium silicide determined the evolution of the silicide layer formation and its crystal structure.",
author = "Mann-Ho Cho and Ko, {Dae Hong} and Choi, {Y. G.} and Lyo, {I. W.} and KwangHo Jeong and Whang, {C. N.}",
year = "2002",
month = "11",
day = "1",
doi = "10.1063/1.1512323",
language = "English",
volume = "92",
pages = "5555--5559",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

YSi 2-x formation in the presence of interfacial SiO 2 layer. / Cho, Mann-Ho; Ko, Dae Hong; Choi, Y. G.; Lyo, I. W.; Jeong, KwangHo; Whang, C. N.

In: Journal of Applied Physics, Vol. 92, No. 9, 01.11.2002, p. 5555-5559.

Research output: Contribution to journalArticle

TY - JOUR

T1 - YSi 2-x formation in the presence of interfacial SiO 2 layer

AU - Cho, Mann-Ho

AU - Ko, Dae Hong

AU - Choi, Y. G.

AU - Lyo, I. W.

AU - Jeong, KwangHo

AU - Whang, C. N.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - YSi 2-x films were grown by ion-assisted evaporation in an ultrahigh vacuum (UHV) on Si(111) through a thin SiO 2 layer. The films grown on the oxidized Si were changed from a polycrystalline structure with various phases of oxides and silicides into a single-crystalline silicide structure as the annealing temperature was increased in the UHV chamber. The structural change with the annealing temperature implied that various Y 2O 3 phases formed by the reaction between Y and SiO 2 were decomposed and transformed into YSi 2-x under the UHV environment. Rutherford backscattering spectroscopy/channeling showed that, although the interfacial crystallinity of the film grown on the SiO 2 layer was poorer quality than the film grown on a clean Si surface, a single crystalline YSi 2-x layer with high crystallinity (χ min=8%) was grown. These results showed that the difference of the thermal energy and the formation energy between the oxides of Y 2O 3-SiO 2 and yttrium silicide determined the evolution of the silicide layer formation and its crystal structure.

AB - YSi 2-x films were grown by ion-assisted evaporation in an ultrahigh vacuum (UHV) on Si(111) through a thin SiO 2 layer. The films grown on the oxidized Si were changed from a polycrystalline structure with various phases of oxides and silicides into a single-crystalline silicide structure as the annealing temperature was increased in the UHV chamber. The structural change with the annealing temperature implied that various Y 2O 3 phases formed by the reaction between Y and SiO 2 were decomposed and transformed into YSi 2-x under the UHV environment. Rutherford backscattering spectroscopy/channeling showed that, although the interfacial crystallinity of the film grown on the SiO 2 layer was poorer quality than the film grown on a clean Si surface, a single crystalline YSi 2-x layer with high crystallinity (χ min=8%) was grown. These results showed that the difference of the thermal energy and the formation energy between the oxides of Y 2O 3-SiO 2 and yttrium silicide determined the evolution of the silicide layer formation and its crystal structure.

UR - http://www.scopus.com/inward/record.url?scp=18744373403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18744373403&partnerID=8YFLogxK

U2 - 10.1063/1.1512323

DO - 10.1063/1.1512323

M3 - Article

VL - 92

SP - 5555

EP - 5559

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -