Zero-writing-power tribotronic MoS2 touch memory

Usman Khan, Tae Ho Kim, Muhammad Atif Khan, Jihye Kim, Christian Falconi, Sang Woo Kim

Research output: Contribution to journalArticlepeer-review


Here we demonstrate a zero-writing-power tribotronic touch memory based on polydimethylsiloxane (PDMS)-passivated two-dimensional (2D) MoS2. Triboelectric charges generated by touching the PDMS friction layer are stored on the dielectric PDMS and act as a gate bias which controls the electronic transport in the underlying 2D MoS2 channel. The shift of the threshold voltage can be as high as ~3.5 V and is retained for almost 1 h. During the writing phase, the memory does not consume any power and does not require any battery or connection to electronics. Besides, during the reading phase, a conventional p++ silicon bottom gate allows to bias the touch memory in the highest sensitivity point, so that the output current can be changed by more than two orders of magnitude by a simple touch. Our results open the way for ultimately power-efficient post-impact detection of very slight touches with applications in safety, security, and robotics.

Original languageEnglish
Article number104936
JournalNano Energy
Publication statusPublished - 2020 Sept

Bibliographical note

Funding Information:
U. Khan and T.-H. Kim contributed equally to the work. This research was financially supported by the GRRC program of Gyeonggi Province (GRRC Sungkyunkwan 2017-B05 ) and Korea Electric Power Corporation (Grant number: R18XA02 ).

Publisher Copyright:
© 2020 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)
  • Electrical and Electronic Engineering


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