Zinc diffusion process investigation of InP-based test structures for high-speed avalanche photodiode fabrication

Ilgu Yun, Kyung Sook Hyun

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The characterization of zinc diffusion processes for three different test structures has been investigated. The comparison between the different diffusion process conditions for different test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the amount of Zn3P2 source, the ampoule volume, and the diffusion time. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn3P2 source, the ampoule volume, and the diffusion time, as well as material parameters, such as doping concentration of the diffusion layer. These results from the Zn diffusion process can be utilized for the high-speed InP/InGaAs avalanche photodiodes fabrication.

Original languageEnglish
Pages (from-to)635-639
Number of pages5
JournalMicroelectronics Journal
Volume31
Issue number8
DOIs
Publication statusPublished - 2000 Aug

Fingerprint

Avalanche photodiodes
avalanches
photodiodes
Zinc
zinc
high speed
Fabrication
fabrication
ampoules
Doping (additives)
Secondary ion mass spectrometry
profiles
secondary ion mass spectrometry

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "The characterization of zinc diffusion processes for three different test structures has been investigated. The comparison between the different diffusion process conditions for different test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the amount of Zn3P2 source, the ampoule volume, and the diffusion time. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn3P2 source, the ampoule volume, and the diffusion time, as well as material parameters, such as doping concentration of the diffusion layer. These results from the Zn diffusion process can be utilized for the high-speed InP/InGaAs avalanche photodiodes fabrication.",
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Zinc diffusion process investigation of InP-based test structures for high-speed avalanche photodiode fabrication. / Yun, Ilgu; Hyun, Kyung Sook.

In: Microelectronics Journal, Vol. 31, No. 8, 08.2000, p. 635-639.

Research output: Contribution to journalArticle

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