We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n -channel ZnO thin-film transistors (TFTs) with a low- k poly-4-vinylphenol and high- k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm2 /V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5-7 V), demonstrating a dynamic response of ∼20 ms.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from KOSEF (Program No. R01–2006–000–11277–0), the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, the IT R&D program of MKE/IKA (Grant No. 2006–5076–02, Smart window with transparent electronic devices), and Brain Korea 21 Program. K. Lee acknowledges the support from the National Graduate Science and Technology Scholarship, Republic of Korea.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)