Abstract
We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n -channel ZnO thin-film transistors (TFTs) with a low- k poly-4-vinylphenol and high- k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm2 /V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5-7 V), demonstrating a dynamic response of ∼20 ms.
| Original language | English |
|---|---|
| Article number | 193514 |
| Journal | Applied Physics Letters |
| Volume | 93 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2008 Nov 21 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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ZnO-based low voltage inverter with low- k /high- k double polymer dielectric layer. / Lee, Kimoon; Kim, Ki Tae; Lee, Kwang H.; Lee, Gyubaek; Oh, Min Suk; Choi, Jeong M.; Im, Seongil; Jang, Sungjin; Kim, Eugene.
In: Applied Physics Letters, Vol. 93, No. 19, 193514, 21.11.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - ZnO-based low voltage inverter with low- k /high- k double polymer dielectric layer
AU - Lee, Kimoon
AU - Kim, Ki Tae
AU - Lee, Kwang H.
AU - Lee, Gyubaek
AU - Oh, Min Suk
AU - Choi, Jeong M.
AU - Im, Seongil
AU - Jang, Sungjin
AU - Kim, Eugene
PY - 2008/11/21
Y1 - 2008/11/21
N2 - We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n -channel ZnO thin-film transistors (TFTs) with a low- k poly-4-vinylphenol and high- k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm2 /V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5-7 V), demonstrating a dynamic response of ∼20 ms.
AB - We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n -channel ZnO thin-film transistors (TFTs) with a low- k poly-4-vinylphenol and high- k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm2 /V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5-7 V), demonstrating a dynamic response of ∼20 ms.
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U2 - 10.1063/1.3028093
DO - 10.1063/1.3028093
M3 - Article
AN - SCOPUS:56249136526
VL - 93
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
M1 - 193514
ER -