ZnO-based low voltage inverter with low- k /high- k double polymer dielectric layer

Kimoon Lee; Ki Tae Kim; Kwang H. Lee; Gyubaek Lee; Min Suk Oh; Jeong M. Choi; Seongil Im; Sungjin Jang; Eugene Kim

doi:10.1063/1.3028093

ZnO-based low voltage inverter with low- k /high- k double polymer dielectric layer

Kimoon Lee, Ki Tae Kim, Kwang H. Lee, Gyubaek Lee, Min Suk Oh, Jeong M. Choi, Seongil Im, Sungjin Jang, Eugene Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n -channel ZnO thin-film transistors (TFTs) with a low- k poly-4-vinylphenol and high- k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm² /V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5-7 V), demonstrating a dynamic response of ∼20 ms.

Original language	English
Article number	193514
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.3028093
Publication status	Published - 2008

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KOSEF (Program No. R01–2006–000–11277–0), the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, the IT R&D program of MKE/IKA (Grant No. 2006–5076–02, Smart window with transparent electronic devices), and Brain Korea 21 Program. K. Lee acknowledges the support from the National Graduate Science and Technology Scholarship, Republic of Korea.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3028093

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title = "ZnO-based low voltage inverter with low- k /high- k double polymer dielectric layer",

abstract = "We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n -channel ZnO thin-film transistors (TFTs) with a low- k poly-4-vinylphenol and high- k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm2 /V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5-7 V), demonstrating a dynamic response of ∼20 ms.",

author = "Kimoon Lee and Kim, {Ki Tae} and Lee, {Kwang H.} and Gyubaek Lee and Oh, {Min Suk} and Choi, {Jeong M.} and Seongil Im and Sungjin Jang and Eugene Kim",

note = "Funding Information: The authors acknowledge the financial support from KOSEF (Program No. R01–2006–000–11277–0), the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, the IT R&D program of MKE/IKA (Grant No. 2006–5076–02, Smart window with transparent electronic devices), and Brain Korea 21 Program. K. Lee acknowledges the support from the National Graduate Science and Technology Scholarship, Republic of Korea.",

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doi = "10.1063/1.3028093",

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AU - Kim, Ki Tae

AU - Lee, Kwang H.

AU - Lee, Gyubaek

AU - Oh, Min Suk

AU - Choi, Jeong M.

AU - Im, Seongil

AU - Jang, Sungjin

AU - Kim, Eugene

N1 - Funding Information: The authors acknowledge the financial support from KOSEF (Program No. R01–2006–000–11277–0), the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, the IT R&D program of MKE/IKA (Grant No. 2006–5076–02, Smart window with transparent electronic devices), and Brain Korea 21 Program. K. Lee acknowledges the support from the National Graduate Science and Technology Scholarship, Republic of Korea.

PY - 2008

Y1 - 2008

N2 - We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n -channel ZnO thin-film transistors (TFTs) with a low- k poly-4-vinylphenol and high- k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm2 /V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5-7 V), demonstrating a dynamic response of ∼20 ms.

AB - We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n -channel ZnO thin-film transistors (TFTs) with a low- k poly-4-vinylphenol and high- k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼0.3 cm2 /V s and our inverter operates with a voltage gain of ∼4 at low supplied voltages (5-7 V), demonstrating a dynamic response of ∼20 ms.

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ZnO-based low voltage inverter with low- k /high- k double polymer dielectric layer

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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