ZnO-based low-voltage inverter with quantum-well-structured nanohybrid dielectric

Sung Hoon Cha; Min Suk Oh; Kwang H. Lee; Jeong M. Choi; Byoung H. Lee; Myung M. Sung; Seongil Im

doi:10.1109/LED.2008.2002908

ZnO-based low-voltage inverter with quantum-well-structured nanohybrid dielectric

Sung Hoon Cha, Min Suk Oh, Kwang H. Lee, Jeong M. Choi, Byoung H. Lee, Myung M. Sung, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/ inorganic nanohybrid dielectric, which contains AlO_x /TiO_xAlO_x in triple-layer structure. The inverter shows a high voltage gain of ∼20 under the supply voltage (V_DD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlO_x -based barrier and trapped in the TiO_χ -based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.

Original language	English
Pages (from-to)	1145-1147
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	10
DOIs	https://doi.org/10.1109/LED.2008.2002908
Publication status	Published - 2008

Bibliographical note

Funding Information:
Manuscript received April 24, 2008; revised July 9, 2008. First published September 3, 2008; current version published September 24, 2008. This work was supported in part by the IT R&D program of MKE [2006-S079-02, under the “Smart window with transparent electronic devices” national project], by the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, and by the Brain Korea 21 Program. The review of this letter was arranged by Editor J. Cai.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2002908

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title = "ZnO-based low-voltage inverter with quantum-well-structured nanohybrid dielectric",

abstract = "We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/ inorganic nanohybrid dielectric, which contains AlOx /TiOxAlOx in triple-layer structure. The inverter shows a high voltage gain of ∼20 under the supply voltage (VDD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx -based barrier and trapped in the TiOχ -based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.",

author = "Cha, {Sung Hoon} and Oh, {Min Suk} and Lee, {Kwang H.} and Choi, {Jeong M.} and Lee, {Byoung H.} and Sung, {Myung M.} and Seongil Im",

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AU - Lee, Byoung H.

AU - Sung, Myung M.

AU - Im, Seongil

N1 - Funding Information: Manuscript received April 24, 2008; revised July 9, 2008. First published September 3, 2008; current version published September 24, 2008. This work was supported in part by the IT R&D program of MKE [2006-S079-02, under the “Smart window with transparent electronic devices” national project], by the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, and by the Brain Korea 21 Program. The review of this letter was arranged by Editor J. Cai.

PY - 2008

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N2 - We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/ inorganic nanohybrid dielectric, which contains AlOx /TiOxAlOx in triple-layer structure. The inverter shows a high voltage gain of ∼20 under the supply voltage (VDD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx -based barrier and trapped in the TiOχ -based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.

AB - We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/ inorganic nanohybrid dielectric, which contains AlOx /TiOxAlOx in triple-layer structure. The inverter shows a high voltage gain of ∼20 under the supply voltage (VDD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx -based barrier and trapped in the TiOχ -based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.

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ZnO-based low-voltage inverter with quantum-well-structured nanohybrid dielectric

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Bibliographical note

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