We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/ inorganic nanohybrid dielectric, which contains AlOx /TiOxAlOx in triple-layer structure. The inverter shows a high voltage gain of ∼20 under the supply voltage (VDD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx -based barrier and trapped in the TiOχ -based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering