ZnO-based low-voltage inverter with quantum-well-structured nanohybrid dielectric

Sung Hoon Cha, Min Suk Oh, Kwang H. Lee, Jeong M. Choi, Byoung H. Lee, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/ inorganic nanohybrid dielectric, which contains AlOx /TiOxAlOx in triple-layer structure. The inverter shows a high voltage gain of ∼20 under the supply voltage (VDD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx -based barrier and trapped in the TiOχ -based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.

Original languageEnglish
Pages (from-to)1145-1147
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 2008

Bibliographical note

Funding Information:
Manuscript received April 24, 2008; revised July 9, 2008. First published September 3, 2008; current version published September 24, 2008. This work was supported in part by the IT R&D program of MKE [2006-S079-02, under the “Smart window with transparent electronic devices” national project], by the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, and by the Brain Korea 21 Program. The review of this letter was arranged by Editor J. Cai.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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