ZnO-based thin-film transistors of optimal device performance

H. S. Bae, Seongil Im

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

ZnO-based thin-film transistors fabricated using silica substrates were investigated. The ZnO channel layers were deposited by radio frequency sputtering. High field effect mobility of ∼1.93 cm2/V was achieved. The transistors revealed a vary large amount of off-state current which resulted in on/off current ratio of only ∼102.

Original languageEnglish
Pages (from-to)1191-1195
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
Publication statusPublished - 2004 May 1

Fingerprint

Thin film transistors
Sputtering
Transistors
transistors
Silica
Substrates
thin films
radio frequencies
sputtering
silicon dioxide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "ZnO-based thin-film transistors fabricated using silica substrates were investigated. The ZnO channel layers were deposited by radio frequency sputtering. High field effect mobility of ∼1.93 cm2/V was achieved. The transistors revealed a vary large amount of off-state current which resulted in on/off current ratio of only ∼102.",
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ZnO-based thin-film transistors of optimal device performance. / Bae, H. S.; Im, Seongil.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 01.05.2004, p. 1191-1195.

Research output: Contribution to journalArticle

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