ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Lynn Lee, Jeongwoon Hwang, Jin Won Jung, Jongchan Kim, Ho In Lee, Sunwoo Heo, Minho Yoon, Sungju Choi, Nguyen Van Long, Jinseon Park, Jae Won Jeong, Jiyoung Kim, Kyung Rok Kim, Dae Hwan Kim, Seongil Im, Byoung Hun Lee, Kyeongjae Cho, Myung Mo Sung

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Abstract

A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate states. A composite nanolayer with zinc oxide quantum dots embedded in amorphous zinc oxide domains generated quantized conducting states at the mobility edge, which we refer to as “mobility edge quantization”. The unique quantized conducting state effectively restricted the occupied number of carriers due to its low density of states, which enable current saturation. Multi-value logic transistors were realized by applying a hybrid superlattice consisting of zinc oxide composite nanolayers and organic barriers as channels in the transistor. The superlattice channels produced multiple states due to current saturation of the quantized conducting state in the composite nanolayers. Our multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with no current fluctuation, and adjustable multi-level states.

Original languageEnglish
Article number1998
JournalNature communications
Volume10
Issue number1
DOIs
Publication statusPublished - 2019 Dec 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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    Lee, L., Hwang, J., Jung, J. W., Kim, J., Lee, H. I., Heo, S., Yoon, M., Choi, S., Van Long, N., Park, J., Jeong, J. W., Kim, J., Kim, K. R., Kim, D. H., Im, S., Lee, B. H., Cho, K., & Sung, M. M. (2019). ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors. Nature communications, 10(1), [1998]. https://doi.org/10.1038/s41467-019-09998-x