ZnO growth on Si substrates by metalorganic vapor phase epitaxy

K. Ogata; S. W. Kim; Sz Fujita; Sg Fujita

doi:10.1016/S0022-0248(02)00911-9

ZnO growth on Si substrates by metalorganic vapor phase epitaxy

K. Ogata, S. W. Kim, Sz Fujita, Sg Fujita

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Diethylzinc (DEZn) and nitrous oxide (N₂O) as a source gas combination in the metalorganic vapor phase epitaxy (MOVPE) of zinc oxide (ZnO) has produced high-quality layers on sapphire, but no growth was confirmed on Si. This problem was overcome by using an underlying layer of ZnO grown directly onto the Si using nitrogen oxide (NO₂) as a more reactive oxidation source. The main ZnO layer grown in this way on the ZnO/Si pretreated at 800°C possessed a c-axis orientation and exhibited bound exciton (BX) emission as narrow as 3 meV at full-width at half-maximum together with a free exciton (EX) at 9 K. These results demonstrated the high potential of MOVPE technology for the growth of ZnO on Si using appropriate surface treatments for optical and electrical applications.

Original language	English
Pages (from-to)	112-116
Number of pages	5
Journal	Journal of Crystal Growth
Volume	240
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(02)00911-9
Publication status	Published - 2002 Apr

Bibliographical note

Funding Information:
This work was supported by the NEDO Regional Consortium Project and by one of the projects at Kyoto University Venture Business Laboratory.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(02)00911-9

Cite this

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title = "ZnO growth on Si substrates by metalorganic vapor phase epitaxy",

abstract = "Diethylzinc (DEZn) and nitrous oxide (N2O) as a source gas combination in the metalorganic vapor phase epitaxy (MOVPE) of zinc oxide (ZnO) has produced high-quality layers on sapphire, but no growth was confirmed on Si. This problem was overcome by using an underlying layer of ZnO grown directly onto the Si using nitrogen oxide (NO2) as a more reactive oxidation source. The main ZnO layer grown in this way on the ZnO/Si pretreated at 800°C possessed a c-axis orientation and exhibited bound exciton (BX) emission as narrow as 3 meV at full-width at half-maximum together with a free exciton (EX) at 9 K. These results demonstrated the high potential of MOVPE technology for the growth of ZnO on Si using appropriate surface treatments for optical and electrical applications.",

author = "K. Ogata and Kim, {S. W.} and Sz Fujita and Sg Fujita",

note = "Funding Information: This work was supported by the NEDO Regional Consortium Project and by one of the projects at Kyoto University Venture Business Laboratory.",

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doi = "10.1016/S0022-0248(02)00911-9",

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T1 - ZnO growth on Si substrates by metalorganic vapor phase epitaxy

AU - Ogata, K.

AU - Kim, S. W.

AU - Fujita, Sz

AU - Fujita, Sg

N1 - Funding Information: This work was supported by the NEDO Regional Consortium Project and by one of the projects at Kyoto University Venture Business Laboratory.

PY - 2002/4

Y1 - 2002/4

N2 - Diethylzinc (DEZn) and nitrous oxide (N2O) as a source gas combination in the metalorganic vapor phase epitaxy (MOVPE) of zinc oxide (ZnO) has produced high-quality layers on sapphire, but no growth was confirmed on Si. This problem was overcome by using an underlying layer of ZnO grown directly onto the Si using nitrogen oxide (NO2) as a more reactive oxidation source. The main ZnO layer grown in this way on the ZnO/Si pretreated at 800°C possessed a c-axis orientation and exhibited bound exciton (BX) emission as narrow as 3 meV at full-width at half-maximum together with a free exciton (EX) at 9 K. These results demonstrated the high potential of MOVPE technology for the growth of ZnO on Si using appropriate surface treatments for optical and electrical applications.

AB - Diethylzinc (DEZn) and nitrous oxide (N2O) as a source gas combination in the metalorganic vapor phase epitaxy (MOVPE) of zinc oxide (ZnO) has produced high-quality layers on sapphire, but no growth was confirmed on Si. This problem was overcome by using an underlying layer of ZnO grown directly onto the Si using nitrogen oxide (NO2) as a more reactive oxidation source. The main ZnO layer grown in this way on the ZnO/Si pretreated at 800°C possessed a c-axis orientation and exhibited bound exciton (BX) emission as narrow as 3 meV at full-width at half-maximum together with a free exciton (EX) at 9 K. These results demonstrated the high potential of MOVPE technology for the growth of ZnO on Si using appropriate surface treatments for optical and electrical applications.

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ZnO growth on Si substrates by metalorganic vapor phase epitaxy

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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