ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition

Kyung Yong Ko, Hyemin Kang, Jusang Park, Byung Wook Min, Hee Sung Lee, Seongil Im, Ji Yeon Kang, Jae Min Myoung, Jae Hun Jung, Soo Hyun Kim, Hyungjun Kim

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9 Citations (Scopus)

Abstract

We investigated the device properties of ZnO homojunction core-shell nanorods (NRs) ultraviolet (UV) photo-detecting diodes depending on fabrication process. ZnO homojunction core-shell NRs fabrication was realized by atomic layer deposition (ALD) of highly conformal ZnO shell with high concentration of nitrogen (HNZO) over hydrothermally synthesized n-ZnO NRs. ALD of HNZO was carried out using diethyl zinc (DEZ) and diluted ammonium hydroxide (NH 4OH) as a Zn precursor and reactant/nitrogen source, respectively. On the electrical analysis, HNZO films is found to be weak n-type or ambiguous and, finally this HNZO attributed the rectifying property at the junction with n-type ZnO NRs. ZnO planar device was also fabricated as a comparative reference. Comparative study between core-shell and planar device has shown that the responsivity of the core-shell device was turned out to be about two times higher than that of planar device. Photoluminescence (PL) intensity of core-shell device was significantly reduced compared to that of planar device for overall region of wavelength, which was attributed to rapid separation of photo-generated carriers. The carrier transport mechanism in core-shell NR device is discussed based on band bending phenomenon.

Original languageEnglish
Pages (from-to)197-204
Number of pages8
JournalSensors and Actuators, A: Physical
Volume210
DOIs
Publication statusPublished - 2014 Apr 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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