ZnO Nanocrystal Thin Films for Quantum-Dot Light-Emitting Devices

Wooje Han; Seongkeun Oh; Chan Lee; Jiwan Kim; Hyung Ho Park

doi:10.1021/acsanm.0c01186

ZnO Nanocrystal Thin Films for Quantum-Dot Light-Emitting Devices

Wooje Han, Seongkeun Oh, Chan Lee, Jiwan Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Zinc oxide nanocrystals (ZnO NCs) were synthesized via a sol-gel method. After the synthesis, their surface was modified using 2,2,2-trifluoroacetic acid followed by ultraviolet (UV) treatment of the resulting fluorinated ZnO (F-ZnO) NC thin films. The chemical bonding therein and their structural and electrical properties were investigated. Moreover, the oxygen vacancy and electroluminescence properties of the densified ZnO NCs were evaluated. The effects of both UV treatment and fluorination on the morphological and electrical characteristics of the F-ZnO NC thin films were established. Based on the results, the ligand on the NCs was decomposed, and the thin film was densified. The mobility of the UV-treated F-ZnO NC thin film, which is 20.48 cm2·V-1·s-1, is four orders higher than the pristine ZnO NC thin film. By UV irradiation, the recombination of oxygen vacancies in ZnO was controlled. With the oxygen vacancies decreased, the core electroluminescence of ZnO was enhanced and the band gap of the ZnO NCs was widened from 3.25 to 3.51 eV. Therefore, the core electroluminescence of ZnO was enhanced while the interlayer emission was decreased for quantum-dot light-emitting device applications.

Original language	English
Pages (from-to)	7535-7542
Number of pages	8
Journal	ACS Applied Nano Materials
Volume	3
Issue number	8
DOIs	https://doi.org/10.1021/acsanm.0c01186
Publication status	Published - 2020 Aug 28

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (no. 2020R1A5A1019131). This work was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (no. 2019R1A2C2087604) and by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (no. 2017R1A2B4012274). Experiments at 10A2, 4D beamline of the Pohang Accelerator Laboratory were supported in part by MEST and POSTECH. This research was financially supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program (P0011268).

Publisher Copyright:
© 2020 American Chemical Society.

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Materials Science(all)

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10.1021/acsanm.0c01186

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@article{79865770503c4cb29b12f3fccee50acd,

title = "ZnO Nanocrystal Thin Films for Quantum-Dot Light-Emitting Devices",

abstract = "Zinc oxide nanocrystals (ZnO NCs) were synthesized via a sol-gel method. After the synthesis, their surface was modified using 2,2,2-trifluoroacetic acid followed by ultraviolet (UV) treatment of the resulting fluorinated ZnO (F-ZnO) NC thin films. The chemical bonding therein and their structural and electrical properties were investigated. Moreover, the oxygen vacancy and electroluminescence properties of the densified ZnO NCs were evaluated. The effects of both UV treatment and fluorination on the morphological and electrical characteristics of the F-ZnO NC thin films were established. Based on the results, the ligand on the NCs was decomposed, and the thin film was densified. The mobility of the UV-treated F-ZnO NC thin film, which is 20.48 cm2·V-1·s-1, is four orders higher than the pristine ZnO NC thin film. By UV irradiation, the recombination of oxygen vacancies in ZnO was controlled. With the oxygen vacancies decreased, the core electroluminescence of ZnO was enhanced and the band gap of the ZnO NCs was widened from 3.25 to 3.51 eV. Therefore, the core electroluminescence of ZnO was enhanced while the interlayer emission was decreased for quantum-dot light-emitting device applications.",

author = "Wooje Han and Seongkeun Oh and Chan Lee and Jiwan Kim and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (no. 2020R1A5A1019131). This work was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (no. 2019R1A2C2087604) and by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (no. 2017R1A2B4012274). Experiments at 10A2, 4D beamline of the Pohang Accelerator Laboratory were supported in part by MEST and POSTECH. This research was financially supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program (P0011268). Publisher Copyright: {\textcopyright} 2020 American Chemical Society.",

year = "2020",

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doi = "10.1021/acsanm.0c01186",

language = "English",

volume = "3",

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journal = "ACS Applied Nano Materials",

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T1 - ZnO Nanocrystal Thin Films for Quantum-Dot Light-Emitting Devices

AU - Han, Wooje

AU - Oh, Seongkeun

AU - Lee, Chan

AU - Kim, Jiwan

AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (no. 2020R1A5A1019131). This work was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (no. 2019R1A2C2087604) and by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (no. 2017R1A2B4012274). Experiments at 10A2, 4D beamline of the Pohang Accelerator Laboratory were supported in part by MEST and POSTECH. This research was financially supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the International Cooperative R&D program (P0011268). Publisher Copyright: © 2020 American Chemical Society.

PY - 2020/8/28

Y1 - 2020/8/28

N2 - Zinc oxide nanocrystals (ZnO NCs) were synthesized via a sol-gel method. After the synthesis, their surface was modified using 2,2,2-trifluoroacetic acid followed by ultraviolet (UV) treatment of the resulting fluorinated ZnO (F-ZnO) NC thin films. The chemical bonding therein and their structural and electrical properties were investigated. Moreover, the oxygen vacancy and electroluminescence properties of the densified ZnO NCs were evaluated. The effects of both UV treatment and fluorination on the morphological and electrical characteristics of the F-ZnO NC thin films were established. Based on the results, the ligand on the NCs was decomposed, and the thin film was densified. The mobility of the UV-treated F-ZnO NC thin film, which is 20.48 cm2·V-1·s-1, is four orders higher than the pristine ZnO NC thin film. By UV irradiation, the recombination of oxygen vacancies in ZnO was controlled. With the oxygen vacancies decreased, the core electroluminescence of ZnO was enhanced and the band gap of the ZnO NCs was widened from 3.25 to 3.51 eV. Therefore, the core electroluminescence of ZnO was enhanced while the interlayer emission was decreased for quantum-dot light-emitting device applications.

AB - Zinc oxide nanocrystals (ZnO NCs) were synthesized via a sol-gel method. After the synthesis, their surface was modified using 2,2,2-trifluoroacetic acid followed by ultraviolet (UV) treatment of the resulting fluorinated ZnO (F-ZnO) NC thin films. The chemical bonding therein and their structural and electrical properties were investigated. Moreover, the oxygen vacancy and electroluminescence properties of the densified ZnO NCs were evaluated. The effects of both UV treatment and fluorination on the morphological and electrical characteristics of the F-ZnO NC thin films were established. Based on the results, the ligand on the NCs was decomposed, and the thin film was densified. The mobility of the UV-treated F-ZnO NC thin film, which is 20.48 cm2·V-1·s-1, is four orders higher than the pristine ZnO NC thin film. By UV irradiation, the recombination of oxygen vacancies in ZnO was controlled. With the oxygen vacancies decreased, the core electroluminescence of ZnO was enhanced and the band gap of the ZnO NCs was widened from 3.25 to 3.51 eV. Therefore, the core electroluminescence of ZnO was enhanced while the interlayer emission was decreased for quantum-dot light-emitting device applications.

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U2 - 10.1021/acsanm.0c01186

DO - 10.1021/acsanm.0c01186

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JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 8

ER -

ZnO Nanocrystal Thin Films for Quantum-Dot Light-Emitting Devices

Abstract

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