TY - GEN
T1 - ZnO nanowalls and nanocolumns grown by metalorganic chemical vapor deposition
AU - Kim, Sang Woo
AU - Fujita, Shizuo
AU - Yi, Min Su
AU - Kim, Han Ki
AU - Yang, Beelyong
AU - Yoon, Dae Ho
PY - 2007
Y1 - 2007
N2 - ZnO nanowalls and nanocolumns were synthesized on Si3N 4 (50 nm)/Si (001) substrates at low growth temperature (350 and 400 °C) by metalorganic chemical vapor deposition (MOCVD) with no metal catalysts. ZnO nanowalls with extremely small wall thicknesses below 10 nm and nanocolumns with diameters over 100 nm were formed on the Si3N 4/Si substrates relying on MOCVD-growth temperature. It was found that ZnO nanowalls have a strong c-axis preferred orientation with a hexagonal structure, while ZnO nanocolumns have a weak c-axis preferred orientation with broken stacking orders in synchrotron x-ray scattering experiments. In addition, strong free-exciton emission from the ZnO nanowalls was clearly observed in photoluminescence measurements. On the other hand, we could not observe any emission bands from the ZnO nanocolumn samples.
AB - ZnO nanowalls and nanocolumns were synthesized on Si3N 4 (50 nm)/Si (001) substrates at low growth temperature (350 and 400 °C) by metalorganic chemical vapor deposition (MOCVD) with no metal catalysts. ZnO nanowalls with extremely small wall thicknesses below 10 nm and nanocolumns with diameters over 100 nm were formed on the Si3N 4/Si substrates relying on MOCVD-growth temperature. It was found that ZnO nanowalls have a strong c-axis preferred orientation with a hexagonal structure, while ZnO nanocolumns have a weak c-axis preferred orientation with broken stacking orders in synchrotron x-ray scattering experiments. In addition, strong free-exciton emission from the ZnO nanowalls was clearly observed in photoluminescence measurements. On the other hand, we could not observe any emission bands from the ZnO nanocolumn samples.
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U2 - 10.4028/3-908451-31-0.77
DO - 10.4028/3-908451-31-0.77
M3 - Conference contribution
AN - SCOPUS:38549119068
SN - 3908451310
SN - 9783908451310
T3 - Solid State Phenomena
SP - 77
EP - 80
BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PB - Trans Tech Publications Ltd
T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Y2 - 10 September 2006 through 14 September 2006
ER -