ZnO nanowire transistor inverter using top-gate electrodes with different work functions

Young Tack Lee; Jong Keun Kim; Ryong Ha; Heon Jin Choi; Seongil Im

doi:10.1063/1.3651753

ZnO nanowire transistor inverter using top-gate electrodes with different work functions

Young Tack Lee, Jong Keun Kim, Ryong Ha, Heon Jin Choi, Seongil Im

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

ZnO-nanowire field effect transistors (FETs) with a top gate Al ₂O₃ dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (V_T) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their V_T values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.

Original language	English
Article number	153507
Journal	Applied Physics Letters
Volume	99
Issue number	15
DOIs	https://doi.org/10.1063/1.3651753
Publication status	Published - 2011 Oct 10

Bibliographical note

Funding Information:
The authors acknowledge the financial support from NRF (NRL Program No. 2011-0000375) and BK21 Project. Y. T. Lee would like to thank for the Hi Seoul Science / Humanities Fellowship. Y.T. Lee and J.K. Kim equally contributed to this work.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3651753

Cite this

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abstract = "ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.",

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AU - Keun Kim, Jong

AU - Ha, Ryong

AU - Choi, Heon Jin

AU - Im, Seongil

N1 - Funding Information: The authors acknowledge the financial support from NRF (NRL Program No. 2011-0000375) and BK21 Project. Y. T. Lee would like to thank for the Hi Seoul Science / Humanities Fellowship. Y.T. Lee and J.K. Kim equally contributed to this work.

PY - 2011/10/10

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N2 - ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.

AB - ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.

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ZnO nanowire transistor inverter using top-gate electrodes with different work functions

Abstract

Bibliographical note

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