ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from NRF (NRL Program No. 2011-0000375) and BK21 Project. Y. T. Lee would like to thank for the Hi Seoul Science / Humanities Fellowship. Y.T. Lee and J.K. Kim equally contributed to this work.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)