Abstract
ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.
| Original language | English |
|---|---|
| Article number | 153507 |
| Journal | Applied Physics Letters |
| Volume | 99 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2011 Oct 10 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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ZnO nanowire transistor inverter using top-gate electrodes with different work functions. / Tack Lee, Young; Keun Kim, Jong; Ha, Ryong; Choi, Heon-Jin; Im, Seongil.
In: Applied Physics Letters, Vol. 99, No. 15, 153507, 10.10.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - ZnO nanowire transistor inverter using top-gate electrodes with different work functions
AU - Tack Lee, Young
AU - Keun Kim, Jong
AU - Ha, Ryong
AU - Choi, Heon-Jin
AU - Im, Seongil
PY - 2011/10/10
Y1 - 2011/10/10
N2 - ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.
AB - ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.
UR - http://www.scopus.com/inward/record.url?scp=80054978322&partnerID=8YFLogxK
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U2 - 10.1063/1.3651753
DO - 10.1063/1.3651753
M3 - Article
VL - 99
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 153507
ER -