Abstract
ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.
| Original language | English |
|---|---|
| Article number | 153507 |
| Journal | Applied Physics Letters |
| Volume | 99 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2011 Oct 10 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Tack Lee, Y., Keun Kim, J., Ha, R., Choi, H. J., & Im, S. (2011). ZnO nanowire transistor inverter using top-gate electrodes with different work functions. Applied Physics Letters, 99(15), [153507]. https://doi.org/10.1063/1.3651753