ZnO nanowires and P3HT polymer composite TFT device

Kyeong Ju Moon, Ji Hyuk Choi, Jyoti Prakash Kar, Jae Min Myoung

Research output: Contribution to journalArticle

Abstract

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/ Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at 100 °C for 10 hours. Au/inorganic-organic composite layer/SiO2 structures were fabricated and the mobility, Ion/Ioff ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately 10-4 cm2/V·s. However, the mobility of the ZnO nanowire /P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the Ion/Ioff ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

Original languageEnglish
Pages (from-to)33-36
Number of pages4
JournalKorean Journal of Materials Research
Volume19
Issue number1
DOIs
Publication statusPublished - 2009 Aug 19

Fingerprint

Composite films
Thin film transistors
Nanowires
Polymers
Composite materials
poly(3-hexylthiophene)
Ions
Spin coating
Threshold voltage
Electric properties
Vacuum
Annealing
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Moon, Kyeong Ju ; Choi, Ji Hyuk ; Kar, Jyoti Prakash ; Myoung, Jae Min. / ZnO nanowires and P3HT polymer composite TFT device. In: Korean Journal of Materials Research. 2009 ; Vol. 19, No. 1. pp. 33-36.
@article{d29493031dab4449a484d7d224bbde57,
title = "ZnO nanowires and P3HT polymer composite TFT device",
abstract = "Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/ Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at 100 °C for 10 hours. Au/inorganic-organic composite layer/SiO2 structures were fabricated and the mobility, Ion/Ioff ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately 10-4 cm2/V·s. However, the mobility of the ZnO nanowire /P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the Ion/Ioff ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.",
author = "Moon, {Kyeong Ju} and Choi, {Ji Hyuk} and Kar, {Jyoti Prakash} and Myoung, {Jae Min}",
year = "2009",
month = "8",
day = "19",
doi = "10.3740/MRSK.2009.19.1.033",
language = "English",
volume = "19",
pages = "33--36",
journal = "Korean Journal of Materials Research",
issn = "1225-0562",
publisher = "The Korea Federation of Science and Technology",
number = "1",

}

ZnO nanowires and P3HT polymer composite TFT device. / Moon, Kyeong Ju; Choi, Ji Hyuk; Kar, Jyoti Prakash; Myoung, Jae Min.

In: Korean Journal of Materials Research, Vol. 19, No. 1, 19.08.2009, p. 33-36.

Research output: Contribution to journalArticle

TY - JOUR

T1 - ZnO nanowires and P3HT polymer composite TFT device

AU - Moon, Kyeong Ju

AU - Choi, Ji Hyuk

AU - Kar, Jyoti Prakash

AU - Myoung, Jae Min

PY - 2009/8/19

Y1 - 2009/8/19

N2 - Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/ Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at 100 °C for 10 hours. Au/inorganic-organic composite layer/SiO2 structures were fabricated and the mobility, Ion/Ioff ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately 10-4 cm2/V·s. However, the mobility of the ZnO nanowire /P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the Ion/Ioff ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

AB - Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/ Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at 100 °C for 10 hours. Au/inorganic-organic composite layer/SiO2 structures were fabricated and the mobility, Ion/Ioff ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately 10-4 cm2/V·s. However, the mobility of the ZnO nanowire /P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the Ion/Ioff ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

UR - http://www.scopus.com/inward/record.url?scp=68649125081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68649125081&partnerID=8YFLogxK

U2 - 10.3740/MRSK.2009.19.1.033

DO - 10.3740/MRSK.2009.19.1.033

M3 - Article

AN - SCOPUS:68649125081

VL - 19

SP - 33

EP - 36

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

SN - 1225-0562

IS - 1

ER -