ZnO single nanowire-based UV detectors

Sachindra Nath Das, Kyeong Ju Moon, Jyoti Prakash Kar, Ji Hyuk Choi, Junjie Xiong, Tae Il Lee, Jae Min Myoung

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Abstract

In this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side.

Original languageEnglish
Article number022103
JournalApplied Physics Letters
Volume97
Issue number2
DOIs
Publication statusPublished - 2010 Jul 12

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Das, S. N., Moon, K. J., Kar, J. P., Choi, J. H., Xiong, J., Lee, T. I., & Myoung, J. M. (2010). ZnO single nanowire-based UV detectors. Applied Physics Letters, 97(2), [022103]. https://doi.org/10.1063/1.3464287