ZnSe:N epilayers grown by low-pressure metalorganic chemical vapor deposition using a radio frequency plasma source

E. D. Sim, Y. S. Joh, J. H. Song, H. L. Park, S. H. Lee, K. Jeong, S. K. Chang

Research output: Contribution to journalArticle

Abstract

Using nitrogen radio-frequency (RF) plasma operated in low-pressure metal-organic chemical vapor deposition (LP-MOCVD), nitrogen-doped ZnSe epilayers were grown and their optical properties were investigated. In the low-temperature photoluminescence (PL) of nitrogen-doped ZnSe epilayers, two emissions were observed, attributed to a nitrogen acceptor-bound exciton (I1) at 2.792 eV and a donor-acceptor pair (DAP) at 2.70 eV. The characteristics of nitrogen acceptorbound excitons and DAP emissions under excitation power dependent PL spectra were discussed. From theses results, we found that nitrogen was successfully incorporated into selenium sites and then acted as an acceptor. In addition, we obtained the net acceptor concentration 1.15 × 1018 cm-3 by capacitance-voltage profiling.

Original languageEnglish
Pages (from-to)213-216
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume229
Issue number1
DOIs
Publication statusPublished - 2002 Aug 29

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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